Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

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Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l60 ◽

2004 ◽

Vol 44 (2) ◽

pp. L60-L62 ◽

Cited By ~ 10

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

High Temperature ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Current Voltage ◽

Effect Transistor

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Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

ECS Solid State Letters ◽

10.1149/2.001305ssl ◽

2013 ◽

Vol 2 (5) ◽

pp. Q32-Q34 ◽

Cited By ~ 4

Author(s):

J.-Y. Cheng ◽

C. W. Yeung ◽

C. Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Interface Trap ◽

Oxide Interface ◽

Fully Depleted ◽

Effect Transistor

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Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5503 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5503-5506

Author(s):

Hidetoshi Koike ◽

Toshiyuki Enda ◽

Fumitomo Matsuoka ◽

Naoyuki Shigyo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Current ◽

Subthreshold Slope ◽

Effect Transistor ◽

Steep Subthreshold Slope

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Determination of the Drain Saturation Voltage of a Metal–Oxide–Semiconductor Field-Effect Transistor by the Capacitance–Voltage Method

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.068005 ◽

2013 ◽

Vol 52 (6R) ◽

pp. 068005

Author(s):

Kwangsoo Kim ◽

Pyungho Choi ◽

Hyungjoon Kim ◽

Hyoungsun Park ◽

Byoungdeog Choi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Voltage ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Cited By ~ 10

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Responsivity ◽

Effect Transistor

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Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

Canadian Journal of Physics ◽

10.1139/p87-159 ◽

1987 ◽

Vol 65 (8) ◽

pp. 995-998

Author(s):

N. G. Tarr

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Inversion Layer ◽

Potential Drop ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Approximation ◽

Effect Transistor ◽

Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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