Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs

W. Deng; X. Ma; J. Huang

doi:10.1063/1.4892609

Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs

AIP Advances ◽

10.1063/1.4892609 ◽

2014 ◽

Vol 4 (8) ◽

pp. 087107 ◽

Cited By ~ 5

Author(s):

W. Deng ◽

X. Ma ◽

J. Huang

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate

Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2221164 ◽

2012 ◽

Vol 59 (12) ◽

pp. 3292-3298 ◽

Cited By ~ 62

Author(s):

Zhuojun Chen ◽

Yongguang Xiao ◽

Minghua Tang ◽

Ying Xiong ◽

Jianqiang Huang ◽

...

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Long Channel

A surface potential based drain current model for asymmetric double gate MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2010.10.025 ◽

2011 ◽

Vol 56 (1) ◽

pp. 148-154 ◽

Cited By ~ 9

Author(s):

Pradipta Dutta ◽

Binit Syamal ◽

N. Mohankumar ◽

C.K. Sarkar

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate

A surface-potential based drain current model for short-channel symmetric double-gate junctionless transistor

Journal of Computational Electronics ◽

10.1007/s10825-015-0723-z ◽

2015 ◽

Vol 15 (1) ◽

pp. 45-52 ◽

Cited By ~ 8

Author(s):

Ratul Kumar Baruah ◽

Roy P. Paily

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Short Channel ◽

Junctionless Transistor

An explicit surface potential, capacitance and drain current model for double-gate TFET

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106431 ◽

2020 ◽

Vol 140 ◽

pp. 106431 ◽

Cited By ~ 3

Author(s):

Sarabjeet Kaur ◽

Ashish Raman ◽

Rakesh Kumar Sarin

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate

Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523503 ◽

2013 ◽

Cited By ~ 1

Author(s):

M. Cheralathan ◽

C. Sampedro ◽

F. Gamiz ◽

B. Iniguez

Keyword(s):

Temperature Dependence ◽

Current Model ◽

Drain Current ◽

Double Gate

An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/11/115003 ◽

2010 ◽

Vol 25 (11) ◽

pp. 115003 ◽

Cited By ~ 1

Author(s):

Servin Rathi ◽

Jyotika Jogi ◽

Mridula Gupta ◽

R S Gupta

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Nano Scale

Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

International Journal of Electronics ◽

10.1080/00207217.2016.1138514 ◽

2016 ◽

pp. 1-14 ◽

Cited By ~ 3

Author(s):

Rupam Goswami ◽

Brinda Bhowmick ◽

Srimanta Baishya

Keyword(s):

Electric Field ◽

Surface Potential ◽

Current Model ◽

Drain Current

An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544314 ◽

2018 ◽

Author(s):

Monika Bansal ◽

Harsupreet Kaur

Keyword(s):

Current Model ◽

Drain Current ◽

Interface Trap ◽

Device Performance ◽

Double Gate ◽

The Impact ◽

Trap Charges

Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model

Advances in Intelligent Systems and Computing - Contemporary Advances in Innovative and Applicable Information Technology ◽

10.1007/978-981-13-1540-4_5 ◽

2018 ◽

pp. 41-47

Author(s):

Krishnendu Roy ◽

Anal Roy Chowdhury ◽

Arpan Deyasi ◽

Angsuman Sarkar

Keyword(s):

Surface Potential ◽

Drain Current ◽

Double Gate ◽

Double Gate Mosfet