Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

2012 ◽  
Vol 59 (12) ◽  
pp. 3292-3298 ◽  
Author(s):  
Zhuojun Chen ◽  
Yongguang Xiao ◽  
Minghua Tang ◽  
Ying Xiong ◽  
Jianqiang Huang ◽  
...  
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Double Gate ◽  
Long Channel

A surface potential based drain current model for asymmetric double gate MOSFETs

2011 ◽  
Vol 56 (1) ◽  
pp. 148-154 ◽  
Author(s):  
Pradipta Dutta ◽  
Binit Syamal ◽  
N. Mohankumar ◽  
C.K. Sarkar
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Double Gate

scholarly journals Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs

2021 ◽  
Vol 15 ◽  
pp. 1394-1399
Author(s):  
Billel Smaani ◽  
Samir Labiod ◽  
Fares Nafa ◽  
Mohamed Salah Benlatreche ◽  
Saida Latreche
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Poisson's Equation ◽  
Accumulation Mode ◽  
Surrounding Gate ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Long Channel ◽  
Partial Depletion

In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model

An explicit surface potential, capacitance and drain current model for double-gate TFET

2020 ◽  
Vol 140 ◽  
pp. 106431 ◽  
Author(s):  
Sarabjeet Kaur ◽  
Ashish Raman ◽  
Rakesh Kumar Sarin
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Double Gate
Sign in / Sign up

Export Citation Format

Share Document