Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

2015 ◽  
Vol 118 (15) ◽  
pp. 154305 ◽  
Author(s):  
Tian Zhang ◽  
Binesh Puthen-Veettil ◽  
Lingfeng Wu ◽  
Xuguang Jia ◽  
Ziyun Lin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Nanocrystals ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Measurement ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Doped Silicon ◽  
Metal Oxide Semiconductor Structure

Noncontact, Electrode-free Capacitance/Voltage Measurement Based on General Theory of Metal-Oxide-Semiconductor (MOS) Structure

1993 ◽  
Vol 32 (Part 1, No. 9A) ◽  
pp. 4005-4011 ◽  
Author(s):  
Takamasa Sakai ◽  
Motohiro Kohno ◽  
Sadao Hirae ◽  
Ikuyoshi Nakatani ◽  
Tatsufumi Kusuda
Keyword(s):  
General Theory ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Measurement ◽  
Mos Structure ◽  
Capacitance Voltage

Metal‐oxide‐semiconductor structures on germanium/boron doped silicon

1990 ◽  
Vol 68 (9) ◽  
pp. 4647-4651 ◽  
Author(s):  
O. Hashemipour ◽  
S. S. Ang ◽  
W. D. Brown ◽  
J. R. Yeargan
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Boron Doped ◽  
Doped Silicon
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