scholarly journals Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

2015 ◽  
Vol 118 (21) ◽  
pp. 215701 ◽  
Author(s):  
Alexander Pooth ◽  
Michael J. Uren ◽  
Markus Cäsar ◽  
Trevor Martin ◽  
Martin Kuball
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Movement ◽  
Substrate Bias ◽  
Transistor Structure ◽  
Hetero Structure ◽  
Carbon Doped ◽  
Effect Transistor

scholarly journals Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

2011 ◽  
Vol 99 (24) ◽  
pp. 243504 ◽  
Author(s):  
V. V. Popov ◽  
D. V. Fateev ◽  
T. Otsuji ◽  
Y. M. Meziani ◽  
D. Coquillat ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Unit Cell ◽  
Asymmetric Unit ◽  
Transistor Structure ◽  
Terahertz Detection ◽  
Effect Transistor ◽  
Asymmetric Unit Cell

Flexible terahertz modulator based on coplanar-gate graphene field-effect transistor structure

2016 ◽  
Vol 41 (4) ◽  
pp. 816 ◽  
Author(s):  
Jingbo Liu ◽  
Pingjian Li ◽  
Yuanfu Chen ◽  
Xinbo Song ◽  
Qi Mao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Transistor Structure ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document