Conductance slope and curvature coefficient of InGaAs/GaAsSb heterojunctions at varying band alignments and its implication on digital and analog applications

2015 ◽  
Vol 118 (23) ◽  
pp. 235702 ◽  
Author(s):  
Ryan M. Iutzi ◽  
Eugene A. Fitzgerald
Keyword(s):  
Curvature Coefficient ◽  
Band Alignments

High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Emission Band ◽  
Excitation Power ◽  
High Excitation ◽  
High Pressure Studies ◽  
Band Alignments ◽  
High Pressure Study

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Depth resolved band alignments of ultrathin TiN/ZrO2and TiN/ZrO2-Al2O3-ZrO2dynamic random access memory capacitors

2014 ◽  
Vol 105 (20) ◽  
pp. 201603 ◽  
Author(s):  
Sang Yeon Lee ◽  
Jaewan Chang ◽  
Younsoo Kim ◽  
HanJin Lim ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Band Alignments

Surface band bending and carrier dynamics in colloidal quantum dot solids

Nanoscale ◽  
2021 ◽  
Author(s):  
Pip C. J. Clark ◽  
Nathan K Lewis ◽  
Chun-Ren Ke ◽  
Rubén Ahumada-Lazo ◽  
Qian Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Charge Carriers ◽  
Surface Band ◽  
Band Bending ◽  
Colloidal Quantum Dot ◽  
Band Alignments

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device....

scholarly journals Creation of Hybrid Photoactive Inorganic/Organic Interface Assemblies of Cadmium Oxide mixtures (CdO2/CdO)/Poly-2,2-Bithiophene; Optical and Photoelectrochemical Investigations

2017 ◽  
Vol 9 (4) ◽  
pp. 71
Author(s):  
Kasem K. Kasem ◽  
Henry Worley ◽  
Ashley Lovins
Keyword(s):  
Charge Separation ◽  
Cadmium Oxide ◽  
Equilibrium Mixture ◽  
Organic Polymer ◽  
Aqueous Electrolytes ◽  
Charge Generation ◽  
Transfer Processes ◽  
Organic Interfaces ◽  
Band Alignments ◽  
Induced Charge

Nanoparticles of cadmium peroxide (CdO2) were immobilized in poly 2,2 bithiophene (PBTh) to build photoactive inorganic/organic interfaces (I/O/I). Studies indicated that the CdO2 initially immobilized in the organic polymer partially decomposed to a low band gap CdO. Therefore we refer to this mixture as CdO2/CdO. The CdO2/CdO/PBTh assemblies were subjected to optical and photoelectrochemical investigations in aqueous electrolytes containing acetate, nitrate, or phosphate. The equilibrium mixture of CdO2/CdO influenced the optical conductivity and dielectric contents of the assemblies. Furthermore, O2 played an important role in the charge separation and transfer processes. The effects of an applied magnetic field were investigated and reported. The results were explained on the basis of formation of hybrid sub-bands due to band alignments between the assembly components. The photo-induced charge generation of PBTh was improved by occlusion of CdO2 in the polymer as was evident by the greater photocurrent generated by CdO2/CdO/PBTh than that generated by PBTh.

Band alignments of SiO2 and HfO2 dielectrics with (Al Ga1-)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire

2018 ◽  
Vol 745 ◽  
pp. 292-298 ◽  
Author(s):  
Zhaoqing Feng ◽  
Qian Feng ◽  
Jincheng Zhang ◽  
Chunfu Zhang ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Band Alignments

Band alignments of sputtered dielectrics on GaN

2019 ◽  
Vol 53 (7) ◽  
pp. 075303 ◽  
Author(s):  
S N Supardan ◽  
P Das ◽  
J D Major ◽  
A Hannah ◽  
Z H Zaidi ◽  
...  
Keyword(s):  
Band Alignments
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