scholarly journals High-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution

APL Materials ◽  
2016 ◽  
Vol 4 (10) ◽  
pp. 104901 ◽  
Author(s):  
J.-B. Vaney ◽  
G. Delaizir ◽  
A. Piarristeguy ◽  
J. Monnier ◽  
E. Alleno ◽  
...  
2014 ◽  
Vol 44 (6) ◽  
pp. 1803-1808 ◽  
Author(s):  
Deepanshu Srivastava ◽  
F. Azough ◽  
M. Molinari ◽  
S. C. Parker ◽  
R. Freer

2015 ◽  
Vol 27 (12) ◽  
pp. 4413-4421 ◽  
Author(s):  
Nasrin Kazem ◽  
Antonio Hurtado ◽  
Fan Sui ◽  
Saneyuki Ohno ◽  
Alexandra Zevalkink ◽  
...  

2014 ◽  
Vol 26 (3) ◽  
pp. 1393-1403 ◽  
Author(s):  
Nasrin Kazem ◽  
Weiwei Xie ◽  
Saneyuki Ohno ◽  
Alexandra Zevalkink ◽  
Gordon J. Miller ◽  
...  

2000 ◽  
Vol 14 (04) ◽  
pp. 131-138 ◽  
Author(s):  
HONG CHEN ◽  
YUZHE YIN ◽  
YUANJIN HE

To improve thermoelectric properties, we attempt to dope Ti into SiC-based composite by transient plastic phase process (TPPP) method. The final result is composed of the functional phase SiC and the reinforcement phases TiC x and TiSi 2. The process of doping is the diffusion of Ti in TiC x solid–solution into SiC grain at high temperature. When the initial SiC is α-type of 5 μm size, the Seebeck coefficient S is less than 10 μV/K at room temperature. SEM photograph shows the reason being that doping is very weak. We change the initial SiC to the β-type of 90 nm size to aid doping. It is observed that S can be significantly improved to 46.3 μV/K at room temperature. When the temperature rises, the improvement is even greater. Measurements of the lattice parameter of β- SiC show that the parameter parallel to the Si–C layer is almost unchanged and the parameter perpendicular to the Si–C layer increases by about 0.48%, which demonstrated that Ti has been successfully doped into the SiC grain and exists as interstitial impurities.


2003 ◽  
Vol 793 ◽  
Author(s):  
Theodora Kyratsi ◽  
Duck Young Chung ◽  
Jeff S. Dyck ◽  
Ctirad Uher ◽  
Sangeeta Lal ◽  
...  

ABSTRACTSolid solution series of the type K2Bi8-xSbxSe13, K2-xRbxBi8Se13 as well as K2Bi8Se13-xSx were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band gaps and their thermoelectric properties were studied. The distribution Se/S appears to be more uniform than the distribution of the Sb and Rb atoms in the β-K2Bi8Se13 structure that shows preference in specific sites in the lattice. Band gap is mainly affected by Sb and S substitution. Seebeck coefficient measurements showed n-type character for of all Se/S members. In the Bi/Sb series an enhancement of p-type character was observed. The thermoelectric performance as well as preliminary high temperature measurements suggest the potential of these materials for high temperature applications.


ChemInform ◽  
2014 ◽  
Vol 45 (18) ◽  
pp. no-no
Author(s):  
Nasrin Kazem ◽  
Weiwei Xie ◽  
Saneyuki Ohno ◽  
Alexandra Zevalkink ◽  
Gordon J. Miller ◽  
...  

ChemInform ◽  
2015 ◽  
Vol 46 (35) ◽  
pp. no-no
Author(s):  
Nasrin Kazem ◽  
Antonio Hurtado ◽  
Fan Sui ◽  
Saneyuki Ohno ◽  
Alexandra Zevalkink ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (61) ◽  
pp. 56511-56517 ◽  
Author(s):  
M. Asaad ◽  
J. Buckman ◽  
R. I. Smith ◽  
J. W. G. Bos

The thermoelectric properties and high-temperature stability of the Ti1−xVxCoSb1−xSnx solid solution have been investigated.


Author(s):  
M. Larsen ◽  
R.G. Rowe ◽  
D.W. Skelly

Microlaminate composites consisting of alternating layers of a high temperature intermetallic compound for elevated temperature strength and a ductile refractory metal for toughening may have uses in aircraft engine turbines. Microstructural stability at elevated temperatures is a crucial requirement for these composites. A microlaminate composite consisting of alternating layers of Cr2Nb and Nb(Cr) was produced by vapor phase deposition. The stability of the layers at elevated temperatures was investigated by cross-sectional TEM.The as-deposited composite consists of layers of a Nb(Cr) solid solution with a composition in atomic percent of 91% Nb and 9% Cr. It has a bcc structure with highly elongated grains. Alternating with this Nb(Cr) layer is the Cr2Nb layer. However, this layer has deposited as a fine grain Cr(Nb) solid solution with a metastable bcc structure and a lattice parameter about half way between that of pure Nb and pure Cr. The atomic composition of this layer is 60% Cr and 40% Nb. The interface between the layers in the as-deposited condition appears very flat (figure 1). After a two hour, 1200 °C heat treatment, the metastable Cr(Nb) layer transforms to the Cr2Nb phase with the C15 cubic structure. Grain coarsening occurs in the Nb(Cr) layer and the interface between the layers roughen. The roughening of the interface is a prelude to an instability of the interface at higher heat treatment temperatures with perturbations of the Cr2Nb grains penetrating into the Nb(Cr) layer.


Sign in / Sign up

Export Citation Format

Share Document