Metal-organic semiconductor interfacial barrier height determination from internal photoemission signal in spectral response measurements

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

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Numerical model of ITO /organic semiconductor/metal organic light emitting device

Acta Physica Sinica ◽

10.7498/aps.57.5928 ◽

2008 ◽

Vol 57 (9) ◽

pp. 5928

Author(s):

Hu Yue ◽

Rao Hai-Bo ◽

Li Jun-Fei

Keyword(s):

Numerical Model ◽

Organic Semiconductor ◽

Light Emitting ◽

Organic Light ◽

Metal Organic

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Experimental Methods of Barrier Height Determination

VLSI Electronics Microstructure Science - Metal–Semiconductor Contacts and Devices ◽

10.1016/b978-0-12-234113-7.50008-6 ◽

1986 ◽

pp. 47-86

Keyword(s):

Barrier Height ◽

Experimental Methods ◽

Height Determination

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Temperature-dependent current–voltage measurements of Au/C9H7N/p-Si: Characterization of a metal–organic-semiconductor device

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.02.023 ◽

2015 ◽

Vol 34 ◽

pp. 58-64 ◽

Cited By ~ 9

Author(s):

Z. Çaldıran ◽

Ş. Aydoğan ◽

A. Yesildag ◽

D. Ekinci ◽

S.V. Kurudirek ◽

...

Keyword(s):

Organic Semiconductor ◽

Semiconductor Device ◽

Temperature Dependent ◽

Current Voltage ◽

Metal Organic

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Effect of Layer Relaxation on the Internal Photoemission in Pt/Si1−xGex Schottky Barrier Type Infrared Detectors

MRS Proceedings ◽

10.1557/proc-607-235 ◽

1999 ◽

Vol 607 ◽

Author(s):

B. Aslan ◽

R. Turan ◽

O. Nur ◽

M. Karlsteen ◽

M. Willander

Keyword(s):

Barrier Height ◽

Strain Relaxation ◽

Infrared Detector ◽

Band Edge ◽

Schottky Junction ◽

Si Substrate ◽

Strained Si ◽

Internal Photoemission ◽

Schottky Type ◽

P Type

AbstractA Schottky type infrared detector fabricated on a p-type Si1−xGex substrate has a higher cut-off wavelength than one on a pure Si substrate because the barrier height of the Schottky junction on p-type Si1−xGex decreases with the Ge content and the induced strain in the Si1−xGex layer. We have studied the effect of the strain relaxation on the internal photoemission and I-V characteristics of a Pt/Si1−xGex Schottky junction with x=0.14. It is shown that the cut-off wavelength of the diode made on a strained Si0.86Ge0.14 layer is higher than that on a Si substrate as expected. This shows the possibility of tuning the range of these detectors in the mid-infrared region. However, the thermal relaxation in the Si0.86Ge0.14 layer is found to reduce the cut-off wavelength to lower values, showing that the difference between the Fermi level of the metal and the valence band edge increases with the layer relaxation. This effect should be taken into account when a Schottky type infrared detector is manufactured on a strained Si1−xGex film. I-V characteristics of the junctions also indicate an increase of the barrier height with the relaxation of Si1−xGex. These results demonstrate the band edge movements in a Si ixGex layer experimentally agree with the expected changes in the band structure of the Si1−xGex layer with strain relaxation.

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