High temperature electrons exhausted from rf plasma sources along a magnetic nozzle

2017 ◽  
Vol 24 (8) ◽  
pp. 084503 ◽  
Author(s):  
Kazunori Takahashi ◽  
Hikaru Akahoshi ◽  
Christine Charles ◽  
Rod W. Boswell ◽  
Akira Ando
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kazunori Takahashi

AbstractDevelopment of a magnetic nozzle radiofrequency (rf) plasma thruster has been one of challenging topics in space electric propulsion technologies. The thruster typically consists of an rf plasma source and a magnetic nozzle, where the plasma produced inside the source is transported along the magnetic field and expands in the magnetic nozzle. An imparted thrust is significantly affected by the rf power coupling for the plasma production, the plasma transport, the plasma loss to the wall, and the plasma acceleration process in the magnetic nozzle. The rf power transfer efficiency and the imparted thrust are assessed for two types of rf antennas exciting azimuthal mode number of $$m=+1$$ m = + 1 and $$m=0$$ m = 0 , where propellant argon gas is introduced from the upstream of the thruster source tube. The rf power transfer efficiency and the density measured at the radial center for the $$m=+1$$ m = + 1 mode antenna are higher than those for the $$m=0$$ m = 0 mode antenna, while a larger thrust is obtained for the $$m=0$$ m = 0 mode antenna. Two-dimensional plume characterization suggests that the lowered performance for the $$m=+1$$ m = + 1 mode case is due to the plasma production at the radial center, where contribution on a thrust exerted to the magnetic nozzle is weak due to the absence of the radial magnetic field. Subsequently, the configuration is modified so as to introduce the propellant gas near the thruster exit for the $$m=0$$ m = 0 mode configuration and the thruster efficiency approaching twenty percent is successfully obtained, being highest to date in the kW-class magnetic nozzle rf plasma thrusters.


1999 ◽  
Vol 198-199 ◽  
pp. 1028-1031 ◽  
Author(s):  
Y.K Yap ◽  
Y Mori ◽  
S Kida ◽  
T Aoyama ◽  
T Sasaki

2004 ◽  
Vol 30 (8) ◽  
pp. 687-697 ◽  
Author(s):  
K. V. Vavilin ◽  
A. A. Rukhadze ◽  
M. Kh. Ri ◽  
V. Yu. Plaksin
Keyword(s):  

2004 ◽  
Vol 49 (6) ◽  
pp. 691-697 ◽  
Author(s):  
K. V. Vavilin ◽  
A. A. Rukhadze ◽  
Kh. M. Ri ◽  
V. Yu. Plaksin

2011 ◽  
Vol 110-116 ◽  
pp. 991-996
Author(s):  
Lee Siang Chuah ◽  
A. Mahyudin ◽  
Z. Hasan ◽  
C.W. Chin

A high-quality crack-free AlN cap layer on GaN layer has been achieved using an AlN buffer layer directly grown on a silicon substrate at high temperature by radio frequency (RF) plasma-assisted molecular beam epitaxy. A two dimensional (2D) growth process guide to AlN cap layer of high grade crystal quality. The nucleation and the growth dynamics have been studied by in situ reflection high energy electron diffraction (RHEED) and ex situ by high resolution transmission electron microscopy (HR-TEM). The microstructure was investigated by energy-dispersive X-ray spectroscopy (EDX). It was disclosed that AlN is single crystalline with low defect. High densities of V-shaped pits were not detected at the interface between AlN and GaN layers. Contradictory the earlier reported V-shaped defects in nitride-based alloys; these V-shaped pits were condensed on top of the AlN layer because of H2 etching of the surface when a high temperature growth discontinuity between AlN and GaN layers.


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