scholarly journals A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

AIP Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 085112 ◽  
Author(s):  
Peng Dong ◽  
Xuegong Yu ◽  
Yao Ma ◽  
Meng Xie ◽  
Yun Li ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deep Level Transient Spectroscopy ◽  
Gamma Ray ◽  
Deep Level ◽  
Nitride Layer ◽  
Spectroscopy Study ◽  
Silicon Nitride Layer ◽  
Gamma Ray Irradiation ◽  
Transient Spectroscopy

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

2010 ◽  
Vol 96 (10) ◽  
pp. 103507 ◽  
Author(s):  
Chun Gong ◽  
Eddy Simoen ◽  
Niels Posthuma ◽  
Emmanuel Van Kerschaver ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deep Level Transient Spectroscopy ◽  
Surface Passivation ◽  
Deep Level ◽  
Interface States ◽  
Spectroscopy Study ◽  
Transient Spectroscopy ◽  
Silicon Interface

Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes

2004 ◽  
Author(s):  
Souvick Mitra ◽  
Mulpuri V. Rao ◽  
N. Papanicolaou ◽  
K. A. Jones ◽  
M. Derenge
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

scholarly journals Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

1992 ◽  
Vol 82 (5) ◽  
pp. 841-844
Author(s):  
A. Babiński ◽  
J. Przybytek ◽  
M. Baj ◽  
P. Omling ◽  
L. Samuelson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC

2021 ◽  
Vol 21 (3) ◽  
pp. 1904-1908
Author(s):  
Woo-Young Son ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
Sang-Mo Koo
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Surface States ◽  
Nitride Layer ◽  
Double Negative ◽  
Capture Cross ◽  
Trap Energy ◽  
Transient Spectroscopy

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times.

A deep-level transient spectroscopy study of transition metals in n-type germanium

2006 ◽  
Vol 9 (4-5) ◽  
pp. 559-563 ◽  
Author(s):  
S. Forment ◽  
J. Vanhellemont ◽  
P. Clauws ◽  
J. Van Steenbergen ◽  
S. Sioncke ◽  
...  
Keyword(s):  
Transition Metals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy
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