Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

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RETRACTED: Structural, optical, and electrical properties of Schottky diodes based on undoped and cobalt-doped ZnO nanorods prepared by RF-magnetron sputtering

Materials Science and Engineering B ◽

10.1016/j.mseb.2013.06.011 ◽

2013 ◽

Vol 178 (16) ◽

pp. 1048-1056 ◽

Cited By ~ 18

Author(s):

Husam S. Al-Salman ◽

M.J. Abdullah

Keyword(s):

Electrical Properties ◽

Magnetron Sputtering ◽

Schottky Diodes ◽

Zno Nanorods ◽

Rf Magnetron Sputtering ◽

Optical And Electrical Properties ◽

Doped Zno

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Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2018.02.003 ◽

2018 ◽

Vol 79 ◽

pp. 53-60 ◽

Cited By ~ 31

Author(s):

M.A.M Ahmed ◽

B.S. Mwankemwa ◽

E. Carleschi ◽

B.P. Doyle ◽

W.E. Meyer ◽

...

Keyword(s):

Electrical Properties ◽

Chemical Bath Deposition ◽

Schottky Diodes ◽

Zno Nanorods ◽

Optical And Electrical Properties

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Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1165 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 1165-1167 ◽

Cited By ~ 5

Author(s):

Yan-Kuin Su ◽

Chung-Te Lin ◽

Hsin-Tien Huang ◽

Shoou-Jinn Chang ◽

Tai-Ping Sun ◽

...

Keyword(s):

Electrical Properties ◽

Native Oxide ◽

High Quality

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Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate

Applied Physics A ◽

10.1007/s00339-016-0415-y ◽

2016 ◽

Vol 122 (11) ◽

Cited By ~ 7

Author(s):

Haibo Fan ◽

Mingzi Wang ◽

Zhou Yang ◽

Xianpei Ren ◽

Mingli Yin ◽

...

Keyword(s):

Electrical Properties ◽

Sapphire Substrate ◽

Epitaxial Film ◽

Optical And Electrical Properties ◽

High Quality

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Breakdown Field Model for 3C-SiC Power Device Simulations

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.617 ◽

2018 ◽

Vol 924 ◽

pp. 617-620 ◽

Cited By ~ 1

Author(s):

Hamid Fardi ◽

Bart van Zeghbroeck

Keyword(s):

Field Model ◽

Schottky Diodes ◽

Power Device ◽

Breakdown Field ◽

Power Devices ◽

High Quality ◽

Doping Density ◽

Number Of Publications ◽

P Type ◽

Ionization Rates

Modeling and simulation of 3C-SiC power devices such as MOSFETs and diodes requires a model for the breakdown field that is consistent with the Monte-Carlo-simulated ionization rates of electron and holes and supported by experimental results. The challenge one faces is the limited number of publications reporting such calculations and the limited availability of high-quality ionization breakdown data for 3C-SiC diodes. We therefore performed a series of 2D simulations of both n-type and p-type Schottky diodes and p+-n diodes that confirms the general breakdown field trend with doping density obtained from experiments. We uncovered a difference between n-type and p-type diode breakdown behavior, identified the discrepancy between the calculations and the experimental data, and extracted a simple breakdown field model, useful for further 3C-SiC device design and simulation.

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