Breakdown Field Model for 3C-SiC Power Device Simulations

2018 ◽  
Vol 924 ◽  
pp. 617-620 ◽  
Author(s):  
Hamid Fardi ◽  
Bart van Zeghbroeck
Keyword(s):  
Field Model ◽  
Schottky Diodes ◽  
Power Device ◽  
Breakdown Field ◽  
Power Devices ◽  
High Quality ◽  
Doping Density ◽  
Number Of Publications ◽  
P Type ◽  
Ionization Rates

Modeling and simulation of 3C-SiC power devices such as MOSFETs and diodes requires a model for the breakdown field that is consistent with the Monte-Carlo-simulated ionization rates of electron and holes and supported by experimental results. The challenge one faces is the limited number of publications reporting such calculations and the limited availability of high-quality ionization breakdown data for 3C-SiC diodes. We therefore performed a series of 2D simulations of both n-type and p-type Schottky diodes and p+-n diodes that confirms the general breakdown field trend with doping density obtained from experiments. We uncovered a difference between n-type and p-type diode breakdown behavior, identified the discrepancy between the calculations and the experimental data, and extracted a simple breakdown field model, useful for further 3C-SiC device design and simulation.

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

2004 ◽  
Vol 457-460 ◽  
pp. 1061-1064 ◽  
Author(s):  
David J. Spry ◽  
Andrew J. Trunek ◽  
Philip G. Neudeck
Keyword(s):  
Schottky Diodes ◽  
Breakdown Field ◽  
P Type

n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing

2014 ◽  
Vol 778-780 ◽  
pp. 645-648 ◽  
Author(s):  
Koji Nishi ◽  
Akihiro Ikeda ◽  
Daichi Marui ◽  
Hiroshi Ikenoue ◽  
Tanemasa Asano
Keyword(s):  
New Technology ◽  
Breakdown Field ◽  
High Electron ◽  
Power Devices ◽  
Saturation Velocity ◽  
Impurity Doping ◽  
Wet Chemical ◽  
Crystallographic Defects ◽  
P Type ◽  
Post Implantation

Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several issues for the SiC. For example, while a high-temperature (~1700 °C) post-implantation annealing is required to electrically activate implanted species [, it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [. Therefore, development of new technology for local doping of SiC is highly demanded.

Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1179-1182 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Chiharu Ota ◽  
Johji Nishio ◽  
Takashi Shinohe
Keyword(s):  
Figure Of Merit ◽  
Scaling Law ◽  
Scale Transformation ◽  
Power Device ◽  
Breakdown Field ◽  
Power Devices ◽  
Performance Limit ◽  
Scaling Properties ◽  
Conventional Structure ◽  
Junction Structure

Scaling theory is applied in the design of power devices. The scaling law for power devices is presented. A new figure of merit (HFOM) is derived as an invariant of scale transformation, which is a function of avalanche breakdown field and regarded as a measure of the performance of a power device. The optimization of a SiC Schottky barrier diode with the floating junction structure (Super-SBD) has been performed using the HFOM as a measure of the performance. The performance of the optimized Super-SBD surpasses the performance limit of 4H-SiC devices with the conventional structure.

scholarly journals A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

2002 ◽  
Vol 742 ◽  
Author(s):  
François Templier ◽  
Nicolas Daval ◽  
Léa Di Cioccio ◽  
Daniel Bourgeat ◽  
Fabrice Letertre ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Systems ◽  
Schottky Diodes ◽  
Electrical Performance ◽  
Power Devices ◽  
High Quality ◽  
Reverse Mode ◽  
New Process

ABSTRACTFeasibility of 4H-SiC epitaxy on SiCOI substrates has been demonstrated, with high quality of obtained layers. Power Schottky diodes were designed and fabricated on these new structures, and exhibited very interesting electrical performance, particularly in reverse mode, with Vbr ∼ 1000 V. This technology is very promising for the realization of monolithic SiC power systems.

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

2019 ◽  
Vol 963 ◽  
pp. 407-411 ◽  
Author(s):  
Andrea Severino ◽  
Domenico Mello ◽  
Simona Boninelli ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
High Electron ◽  
Power Devices ◽  
High Quality ◽  
High Electron Mobility ◽  
Implantation Process ◽  
P Type ◽  
High Breakdown Electric Field

Silicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, high electron mobility, and low anisotropy. Ion implantation is a key process for both n- and p-type selective doping of SiC devices. A subsequent annealing in the temperature range of 1600- 1800°C is required to remove the damage induced by the implantation process and to electrically activate the implanted dopants. The aim of this work is the investigation of the effect of thermal annealing on the damage induced by Phosphorous ion implantation to produce n-type regions.

A Bibliometric Analysis of Global Research on Lophomonas sp. in Scopus (1933-2019)

2020 ◽  
Vol 20 ◽  
Author(s):  
Masoud Keighobadi ◽  
Maryam Nakhaei ◽  
Ali Sharifpour ◽  
Ali Akbar Khasseh ◽  
Sepideh Safanavaei ◽  
...  
Keyword(s):  
Bibliometric Analysis ◽  
International Collaboration ◽  
Research Articles ◽  
High Quality ◽  
The Real ◽  
The Us ◽  
The World ◽  
Scopus Database ◽  
Number Of Publications ◽  
Global Research

Background: This study was designed to analyze the global research on Lophomonas spp. using bibliometric techniques. Methods: A bibliometric research was carried out using the Scopus database. The analysis unit was the research articles conducted on Lophomonas spp. Results: Totally, 56 articles about Lophomonas spp. were indexed in the Scopus throughout 1933-2019 ( 87 years ) with the following information: (A) The first article was published in 1933; (B) 21 different countries contributed in studies related to Lophomonas spp.; (C) China ranked first with 16 publications about Lophomonas spp.; and (D) “Brugerolle, G” and “Beams, H.W.” from France and the US participated in 4 articles respectively, as the highest number of publications in the Lophomonas spp. network. Discussion: After 87 years, Lophomonas still remains unknown for many researchers and physicians around the world. Further studies with high quality and international collaboration are urgently needed to determine different epidemiological aspects and the real burden of the mysterious parasite worldwide.

A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes

1991 ◽  
Vol 34 (2) ◽  
pp. 215-216 ◽  
Author(s):  
Vincent W.L. Chin ◽  
John W.V. Storey ◽  
Martin A. Green
Keyword(s):  
Schottky Diodes ◽  
Current Voltage ◽  
P Type

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

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