Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells

Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0.7Sr0.3.MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.

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Enhanced stability of filament-type resistive switching by interface engineering

Scientific Reports ◽

10.1038/srep43664 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 28

Author(s):

Y. B. Zhu ◽

K. Zheng ◽

X. Wu ◽

L. K. Ang

Keyword(s):

Resistive Switching ◽

Interface Engineering ◽

Enhanced Stability ◽

Filament Type

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Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b15769 ◽

2019 ◽

Vol 11 (8) ◽

pp. 8155-8163 ◽

Cited By ~ 31

Author(s):

Ji Su Han ◽

Quyet Van Le ◽

Jaeho Choi ◽

Hyojung Kim ◽

Sun Gil Kim ◽

...

Keyword(s):

Resistive Switching ◽

Lead Free ◽

Environment Friendly ◽

Nonvolatile Memories ◽

Tin Iodide ◽

Interface Type

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Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Applied Physics Letters ◽

10.1063/1.4866671 ◽

2014 ◽

Vol 104 (8) ◽

pp. 083507 ◽

Cited By ~ 12

Author(s):

Daeseok Lee ◽

Jiyong Woo ◽

Sangsu Park ◽

Euijun Cha ◽

Sangheon Lee ◽

...

Keyword(s):

Resistive Switching ◽

Layer Structure ◽

Metal Layer ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Reactive Metal ◽

Filament Type

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Approaches for improving the performance of filament-type resistive switching memory

Chinese Science Bulletin ◽

10.1007/s11434-010-4255-4 ◽

2011 ◽

Vol 56 (4-5) ◽

pp. 461-464 ◽

Cited By ~ 11

Author(s):

WenTai Lian ◽

ShiBing Long ◽

HangBing Lü ◽

Qi Liu ◽

YingTao Li ◽

...

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory ◽

Filament Type

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Studies on Control of Oxygen Vacancies in MOD-made BaTiO3 Thin Film by Nitrogen Annealing to Improve Resistive Switching Behavior for ReRAM Application

MRS Advances ◽

10.1557/adv.2017.10 ◽

2017 ◽

Vol 2 (4) ◽

pp. 235-240

Author(s):

S. Maejima ◽

T. Sugie ◽

K. Yamashita ◽

M. Noda

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Oxygen Vacancies ◽

Middle Part ◽

Switching Behavior ◽

Oxide Surface ◽

Oxide Interface ◽

Final Annealing ◽

Bipolar Type ◽

Interface Type

ABSTRACTMetal Organic Decomposition (MOD)-made BaTiO3 (BT) thin films were prepared for Resistive Random Access Memory (ReRAM) under various annealing conditions and investigated for improving the properties of bipolar-type resistive switching, focusing on the relation between oxygen vacancies and the behavior of resistive hysteresis. BT thin films with both pre- and final- annealing in nitrogen showed the resistive hysteresis of bipolar-type switching with current ON/OFF ratios of 2 orders of magnitude for both bias polarities. Finally they showed the endurance property with the 106 switching cycles. It was suggested that oxygen vacancies near the oxide surface (both interfaces at metal electrode/oxide and between layer-by-layered oxide layers) are increased by N2 annealing and enhanced the interface-type resistive switching. Pre-annealing in N2 was also found to be very effective to improve endurance properties, implying that not only the electrode/oxide interface but also the middle part of the film would contribute the interface-type mechanism.

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