Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] Thin Film Memory Devices

2011 ◽  
Vol 14 (1) ◽  
pp. H9 ◽  
Author(s):  
Xinjun Liu ◽  
Kuyyadi P. Biju ◽  
El Mostafa Bourim ◽  
Sangsu Park ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Filament Type

Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices

2011 ◽  
Vol 4 (5) ◽  
pp. 054204 ◽  
Author(s):  
Ying-Chih Chen ◽  
Yan-Kuin Su ◽  
Chun-Yuan Huang ◽  
Hsin-Chieh Yu ◽  
Chiao-Yang Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Hydroxyethyl Methacrylate ◽  
Switching Characteristics

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

scholarly journals Two resistive switching regimes in thin film manganite memory devices on silicon

2013 ◽  
Vol 103 (16) ◽  
pp. 163506 ◽  
Author(s):  
D. Rubi ◽  
F. Tesler ◽  
I. Alposta ◽  
A. Kalstein ◽  
N. Ghenzi ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Switching Regimes

Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

2022 ◽  
Vol 1048 ◽  
pp. 198-202
Author(s):  
K.M. Shafi ◽  
K. Muhammed Shibu ◽  
N.K. Sulfikarali ◽  
K.P. Biju
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour

In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

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