A Study on the Resistive Switching of La0.7Sr0.3MnO3 Film Using Spectromicroscopy

2014 ◽  
Vol 597 ◽  
pp. 184-187
Author(s):  
Hong Sub Lee ◽  
Kyung Mun Kang ◽  
Woo Je Han ◽  
Tae Won Lee ◽  
Chang Sun Park ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Perovskite Manganite ◽  
Access Memory ◽  
Forming Process ◽  
Promising Candidate ◽  
Interface Type

Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0.7Sr0.3.MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Impact of resistive switching parameters on resistive random access memory crossbar arrays

2020 ◽  
Vol 34 (12) ◽  
pp. 2050115
Author(s):  
Liping Fu ◽  
Sikai Chen ◽  
Zewei Wu ◽  
Xiaoyan Li ◽  
Mingyang You ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Storage Density ◽  
Crossbar Array ◽  
Resistance State ◽  
Potential Impact

Sneak current issue of RRAM-based crossbar array is one of the biggest hindrances for high-density memory application. The integration of an addition selector to each cell is one of the most familiar solutions to avoid this undesired cross-talk issue, and resistive switching parameters would affect on the storage density. This paper investigates the potential impact of different resistive switching parameters on crossbar arrays with one-diode one-resistor (1D1R) and one-selector one-resistor (1S1R) architectures. Results indicate that 1S1R architecture is a more scalable technology for high-density crossbar array than 1D1R, and the storage density of 1D1R- and 1S1R-based crossbar array shows little dependence on resistance values of high-resistance state and low-resistance state, which gives a guideline for choosing appropriate selectors for RRAM crossbar array with specific parameters.

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