Studies on Control of Oxygen Vacancies in MOD-made BaTiO3 Thin Film by Nitrogen Annealing to Improve Resistive Switching Behavior for ReRAM Application

MRS Advances ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 235-240
Author(s):  
S. Maejima ◽  
T. Sugie ◽  
K. Yamashita ◽  
M. Noda
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Middle Part ◽  
Switching Behavior ◽  
Oxide Surface ◽  
Oxide Interface ◽  
Final Annealing ◽  
Bipolar Type ◽  
Interface Type

ABSTRACTMetal Organic Decomposition (MOD)-made BaTiO3 (BT) thin films were prepared for Resistive Random Access Memory (ReRAM) under various annealing conditions and investigated for improving the properties of bipolar-type resistive switching, focusing on the relation between oxygen vacancies and the behavior of resistive hysteresis. BT thin films with both pre- and final- annealing in nitrogen showed the resistive hysteresis of bipolar-type switching with current ON/OFF ratios of 2 orders of magnitude for both bias polarities. Finally they showed the endurance property with the 106 switching cycles. It was suggested that oxygen vacancies near the oxide surface (both interfaces at metal electrode/oxide and between layer-by-layered oxide layers) are increased by N2 annealing and enhanced the interface-type resistive switching. Pre-annealing in N2 was also found to be very effective to improve endurance properties, implying that not only the electrode/oxide interface but also the middle part of the film would contribute the interface-type mechanism.

Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

2012 ◽  
Vol 586 ◽  
pp. 24-29
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Fen Shi
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Surface And Interface ◽  
Behavior Study ◽  
Interface Structures ◽  
Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

scholarly journals Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30565-30569 ◽  
Author(s):  
Pengfei Hou ◽  
Siwei Xing ◽  
Xin Liu ◽  
Cheng Chen ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Free Carriers ◽  
Interface Defects ◽  
Out Of Plane ◽  
Planar Device

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

ATR Spectroscopic Study of PMMA/PDMS Graft Copolymers Using a Barrier Layer Method

1995 ◽  
Vol 49 (4) ◽  
pp. 513-519 ◽  
Author(s):  
Eva Marand ◽  
L. Mike Smartt
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Spectroscopic Study ◽  
Penetration Depth ◽  
Barrier Layer ◽  
Graft Copolymers ◽  
Oxide Surface ◽  
Concentration Profiles ◽  
Oxide Interface ◽  
Layer Method

The use of an intermediate barrier layer to vary the penetration depth in an ATR experiment is investigated. Both theoretical and experimental results suggest that this method may be useful in probing concentration profiles away from the interface, particularly in the case of thin films, where variable-angle methods have limitations. Application of this technique in the study of poly(methylmethacrylate)/poly(dimethylsiloxane) (PMMA/PDMS) graft copolymers deposited onto a copper oxide surface indicates a preferential presence of the siloxane component at the oxide interface, a concentration which tends to decrease with increasing distance into the bulk of the sample film.

Effect of Electrode Types on the Resistive Switching Behavior of Titania Thin Films

2013 ◽  
Vol 393 ◽  
pp. 74-78 ◽  
Author(s):  
Zainuddin Aznilinda ◽  
Sukreen Hana Herman ◽  
Raudah Abu Bakar ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Flow Process ◽  
Sputtering Deposition ◽  
Memristive Behavior ◽  
Metal Work Function ◽  
Pt Electrodes ◽  
Metal Work

The resistive switching or memristive behavior of sputtered titania thin films sandwiched in between of three types of metal electrodes (Au, Pt and Ti) was investigated. The active region of the device consisted of two titania thin films, in which, the first layer was exposed to a plasma treatment to create the oxygen vacancies, before the deposition of the second layer. The whole active layer sputtering deposition process was conducted in a one-flow process without exposing the sample to the room ambient. From the I-V measurements, titania thin films in between Ti and Au did not show any resistive switching, but those sandwiched between Pt electrodes exhibit a noticeable memristive behavior. This may due to the metal work function of the platinum itself.

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