scholarly journals Transport properties in resonant tunneling heterostructures

1996 ◽  
Vol 37 (10) ◽  
pp. 4816-4844 ◽  
Author(s):  
Carlo Presilla ◽  
Johannes Sjöstrand
Author(s):  
Mohammad Alipour zadeh ◽  
Yaser Hajati ◽  
Imam Makhfudz

Abstract Existing resonant tunneling modes in the shape of line-type resonances can improve the transport properties of the junction. Motivated by the unique structural properties of monolayer WSe2 e.g. significant spin-orbit coupling (SOC) and large direct bandgap, the transport properties of a normal/ferromagnetic/normal (NFN) WSe2 junction with large incident angles in the presence of exchange field (h), off-resonance light (∆Ω) and gate voltage (U) is studied. In a certain interval of U, the transmission shows a gap with optically controllable width, while outside it, the spin and valley resolved transmissions have an oscillatory behavior with respect to U. By applying ∆Ω (h), an optically (electrically) switchable perfect spin and valley polarizations at all angles of incidence have been found. For large incident angles, the transmission resonances change to spin-valley-dependent separated ideal line-type resonant peaks with respect to U, resulting in switchable perfect spin and valley polarizations, simultaneously. Furthermore, even in the absence of U, applying h or ∆Ω at large incident angles can give some spin-valley dependent ideal transmission peaks, making h or ∆Ω a transmission valve capable of giving a switchable fully spinvalley filtering effect. These findings suggest some alternate methods for providing high-efficiency spin and valley filtering devices based on WSe2.


1998 ◽  
Vol 84 (12) ◽  
pp. 6718-6724 ◽  
Author(s):  
M. Griebel ◽  
K. M. Indlekofer ◽  
A. Förster ◽  
H. Lüth

1995 ◽  
Vol 09 (20) ◽  
pp. 2719-2734 ◽  
Author(s):  
ALMAS F. SADREEV ◽  
VALERY A. VID’MANOV

Transport properties of mesoscopic rings confined between potential barriers are considered. Also considered is the double barrier structure with barriers fabricated of rings connected by a one-dimensional wire. Such structures we define as Aharonov-Bohm diodes with resonant tunneling (ABDRT) because for zero external magnetic flux their transport properties are quite similar to diodes with resonant tunneling (DRT). However, application of external magnetic flux gives rise to new resonant peaks of transmission determined by the quantization condition of the rings. Positions and widths of these novel flux induced resonant peaks extremely depend on the flux.


VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 449-453
Author(s):  
G. Iannaccone ◽  
M. Macucci ◽  
B. Pellegrini

In this paper, we present insights into the transport properties and the geometrical structure of resonant tunneling devices that can be obtained by the study of their noise properties. We stress the importance of including noise behavior among the objectives of device simulations. The reason is twofold: on one hand, as the number of carriers involved in device operation decreases, fluctuations become more relevant; on the other hand, in devices whose functionality is based on quantum effects, noise properties strongly depend on the details of device geometry.


1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.


Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.


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