Active dopant profiling and Ohmic contacts behavior in degenerate n-type           implanted silicon carbide

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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Ohmic Contacts to Silicon Carbide Devices

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide III ◽

10.1007/978-3-642-84402-7_27 ◽

1992 ◽

pp. 183-189 ◽

Cited By ~ 11

Author(s):

M. M. Anikin ◽

M. G. Rastegaeva ◽

A. L. Syrkin ◽

I. V. Chuiko

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts

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Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

Applied Physics Letters ◽

10.1063/1.1290690 ◽

2000 ◽

Vol 77 (10) ◽

pp. 1478-1480 ◽

Cited By ~ 25

Author(s):

S.-K. Lee ◽

C.-M. Zetterling ◽

E. Danielsson ◽

M. Östling ◽

J.-P. Palmquist ◽

...

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Electrical Characterization ◽

Aluminum Ion ◽

Ion Implanted

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Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide

Journal of Electronic Materials ◽

10.1007/s11664-019-07020-0 ◽

2019 ◽

Vol 48 (4) ◽

pp. 2509-2516

Author(s):

Mattias Ekström ◽

Andrea Ferrario ◽

Carl-Mikael Zetterling

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Cobalt Silicide

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Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide

Applied Physics Letters ◽

10.1063/1.105836 ◽

1991 ◽

Vol 59 (22) ◽

pp. 2868-2870 ◽

Cited By ~ 29

Author(s):

R. C. Glass ◽

L. M. Spellman ◽

R. F. Davis

Keyword(s):

Silicon Carbide ◽

Titanium Nitride ◽

Ohmic Contacts ◽

Low Energy

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Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure

10.1117/12.2033910 ◽

2013 ◽

Author(s):

Yue Pan ◽

Aaron M. Collins ◽

Fahid Algahtani ◽

Patrick W. Leech ◽

Geoffrey K. Reeves ◽

...

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Test Structure ◽

Low Resistance

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Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces

ISRN Physical Chemistry ◽

10.1155/2013/487485 ◽

2013 ◽

Vol 2013 ◽

pp. 1-11 ◽

Cited By ~ 1

Author(s):

Paweł Borowicz ◽

Adrian Kuchuk ◽

Zbigniew Adamus ◽

Michał Borysiewicz ◽

Marek Ekielski ◽

...

Keyword(s):

Silicon Carbide ◽

Raman Spectroscopy ◽

Thermal Treatment ◽

Ohmic Contacts ◽

Carbon Film ◽

Graphene Layers ◽

Three Samples ◽

Nickel Silicon

The structure of carbonic layer in three samples composed of 4H polytype of silicon carbide and the following sequence of layers: carbon/nickel/silicon/nickel/silicon was investigated with Raman spectroscopy. Different thermal treatment of the samples led to differences in the structure of carbonic layer. Raman measurements were performed with visible excitation focused on two interfaces: silicon carbide/carbon and carbon/silicide. The results showed differences in the structure across carbon film although its thickness corresponds to 8/10 graphene layers.

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