Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide

2007 ◽  
Author(s):  
R. Ghandi ◽  
H-S. Lee ◽  
M. Domeij ◽  
C-M. Zetterling ◽  
M. Ostling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
Simultaneous Study

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 635-638 ◽  
Author(s):  
Reza Ghandi ◽  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Optimum Conditions ◽  
Power Devices ◽  
High Quality ◽  
Temperature Range ◽  
Type Silicon ◽  
Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

2002 ◽  
Vol 31 (5) ◽  
pp. 506-511 ◽  
Author(s):  
T. Jang ◽  
J. W. Erickson ◽  
L. M. Porter
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
P Type

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

2005 ◽  
Vol 97 (8) ◽  
pp. 083709 ◽  
Author(s):  
I. P. Nikitina ◽  
K. V. Vassilevski ◽  
N. G. Wright ◽  
A. B. Horsfall ◽  
A. G. O’Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Nickel Silicide ◽  
Type Silicon

Tantalum carbide ohmic contacts ton-type silicon carbide

1999 ◽  
Vol 75 (25) ◽  
pp. 3956-3958 ◽  
Author(s):  
T. Jang ◽  
L. M. Porter ◽  
G. W. M. Rutsch ◽  
B. Odekirk
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Tantalum Carbide ◽  
Type Silicon

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone
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