Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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Ohmic Contacts to Silicon Carbide Devices

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide III ◽

10.1007/978-3-642-84402-7_27 ◽

1992 ◽

pp. 183-189 ◽

Cited By ~ 11

Author(s):

M. M. Anikin ◽

M. G. Rastegaeva ◽

A. L. Syrkin ◽

I. V. Chuiko

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts

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Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

Applied Physics Letters ◽

10.1063/1.1290690 ◽

2000 ◽

Vol 77 (10) ◽

pp. 1478-1480 ◽

Cited By ~ 25

Author(s):

S.-K. Lee ◽

C.-M. Zetterling ◽

E. Danielsson ◽

M. Östling ◽

J.-P. Palmquist ◽

...

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Electrical Characterization ◽

Aluminum Ion ◽

Ion Implanted

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Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide

Applied Physics Letters ◽

10.1063/1.105836 ◽

1991 ◽

Vol 59 (22) ◽

pp. 2868-2870 ◽

Cited By ~ 29

Author(s):

R. C. Glass ◽

L. M. Spellman ◽

R. F. Davis

Keyword(s):

Silicon Carbide ◽

Titanium Nitride ◽

Ohmic Contacts ◽

Low Energy

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Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure

10.1117/12.2033910 ◽

2013 ◽

Author(s):

Yue Pan ◽

Aaron M. Collins ◽

Fahid Algahtani ◽

Patrick W. Leech ◽

Geoffrey K. Reeves ◽

...

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Test Structure ◽

Low Resistance

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Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces

ISRN Physical Chemistry ◽

10.1155/2013/487485 ◽

2013 ◽

Vol 2013 ◽

pp. 1-11 ◽

Cited By ~ 1

Author(s):

Paweł Borowicz ◽

Adrian Kuchuk ◽

Zbigniew Adamus ◽

Michał Borysiewicz ◽

Marek Ekielski ◽

...

Keyword(s):

Silicon Carbide ◽

Raman Spectroscopy ◽

Thermal Treatment ◽

Ohmic Contacts ◽

Carbon Film ◽

Graphene Layers ◽

Three Samples ◽

Nickel Silicon

The structure of carbonic layer in three samples composed of 4H polytype of silicon carbide and the following sequence of layers: carbon/nickel/silicon/nickel/silicon was investigated with Raman spectroscopy. Different thermal treatment of the samples led to differences in the structure of carbonic layer. Raman measurements were performed with visible excitation focused on two interfaces: silicon carbide/carbon and carbon/silicide. The results showed differences in the structure across carbon film although its thickness corresponds to 8/10 graphene layers.

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Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422387 ◽

2007 ◽

Author(s):

R. Ghandi ◽

H-S. Lee ◽

M. Domeij ◽

C-M. Zetterling ◽

M. Ostling

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Type Silicon ◽

Simultaneous Study

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Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications

Solid-State Electronics ◽

10.1016/j.sse.2005.06.005 ◽

2005 ◽

Vol 49 (8) ◽

pp. 1297-1301 ◽

Cited By ~ 10

Author(s):

Sang-Kwon Lee ◽

Eun-Kyung Suh ◽

Nam-Kyu Cho ◽

Hyo-Duck Park ◽

Lars Uneus ◽

...

Keyword(s):

Silicon Carbide ◽

Gas Sensor ◽

Ohmic Contacts ◽

Harsh Environment ◽

Comparison Study ◽

Sensor Applications

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A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.338-342.1001 ◽

2000 ◽

Vol 338-342 ◽

pp. 1001-1004 ◽

Cited By ~ 1

Author(s):

T. Jang ◽

G. Rutsch ◽

B. Odekirk ◽

L.M. Porter

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Elevated Temperatures ◽

Tantalum Carbide ◽

Type Silicon ◽

P Type

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Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.635 ◽

2008 ◽

Vol 600-603 ◽

pp. 635-638 ◽

Cited By ~ 2

Author(s):

Reza Ghandi ◽

Hyung Seok Lee ◽

Martin Domeij ◽

Carl Mikael Zetterling ◽

Mikael Östling

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Annealing Temperature ◽

Contact Resistivity ◽

Optimum Conditions ◽

Power Devices ◽

High Quality ◽

Temperature Range ◽

Type Silicon ◽

Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

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