Plasma-assisted combustion synthesis of p-type transparent Cu incorporated NiO thin films—Correlation between deposition chemistry and charge transport characteristics

2021 ◽  
Vol 129 (9) ◽  
pp. 095104
Author(s):  
Chetan C. Singh ◽  
Aditya N. Roy Choudhury ◽  
Dayanand S. Sutar ◽  
Shaibal K Sarkar
2018 ◽  
Vol 6 (46) ◽  
pp. 12584-12591 ◽  
Author(s):  
Jun Yang ◽  
Bowen Wang ◽  
Yongpeng Zhang ◽  
Xingwei Ding ◽  
Jianhua Zhang

The p-type Li:NiOx thin films were successfully fabricated through the SUV route at 150 °C.


2018 ◽  
Vol 10 (4) ◽  
pp. 3732-3738 ◽  
Author(s):  
Jian Wang ◽  
Trey B. Daunis ◽  
Lanxia Cheng ◽  
Bo Zhang ◽  
Jiyoung Kim ◽  
...  

2020 ◽  
Vol 240 ◽  
pp. 122059 ◽  
Author(s):  
Adeline Miquelot ◽  
Myrto Despotopoulou ◽  
Constantin Vahlas ◽  
Christina Villeneuve ◽  
Nita Dragoe ◽  
...  

2013 ◽  
Vol 1536 ◽  
pp. 195-200 ◽  
Author(s):  
Kent E. Bodurtha ◽  
J. Kakalios

ABSTRACTMixed phase thin films consisting of hydrogenated amorphous silicon (a-Si:H) in which germanium nanocrystals (nc-Ge) are embedded have been synthesized using a dual-chamber co-deposition system. Raman spectroscopy and x-ray diffraction measurements confirm the presence of 4 - 4.5 nm diameter nc-Ge homogenously embedded within the a-Si:H matrix. The conductivity and thermopower are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10%, the thermopower is n-type (as in undoped a-Si:H) while for XGe > 25% p-type transport is observed. For films with 10 < XGe < 25% the thermopower shifts from p-type to n-type as the temperature is increased. This transition is faster than expected from a standard two-channel model for charge transport.


1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.


Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  

Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  

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