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Plasma parameters in very high frequency argon plasmas mixed with nitrogen at atmospheric pressure
Journal of Applied Physics
◽
10.1063/5.0047057
◽
2021
◽
Vol 129
(17)
◽
pp. 173302
Author(s):
Kiyoshi Yasutake
◽
Kazushi Yoshida
◽
Hiromasa Ohmi
◽
Hiroaki Kakiuchi
Keyword(s):
Atmospheric Pressure
◽
High Frequency
◽
Plasma Parameters
◽
Very High Frequency
◽
Argon Plasmas
◽
Very High
Download Full-text
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Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure
Journal of Applied Physics
◽
10.1063/5.0010195
◽
2020
◽
Vol 128
(13)
◽
pp. 133303
Author(s):
Kazushi Yoshida
◽
Ken Nitta
◽
Hiromasa Ohmi
◽
Kiyoshi Yasutake
◽
Hiroaki Kakiuchi
Keyword(s):
Atmospheric Pressure
◽
High Frequency
◽
Plasma Parameters
◽
Very High Frequency
◽
Argon Plasmas
◽
Very High
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Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High Frequency Plasma
ECS Meeting Abstracts
◽
10.1149/ma2009-02/34/2510
◽
2009
◽
Keyword(s):
Atmospheric Pressure
◽
High Frequency
◽
High Rate
◽
Very High Frequency
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Si Films
◽
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Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors
physica status solidi (a)
◽
10.1002/pssa.201532328
◽
2015
◽
Vol 212
(7)
◽
pp. 1571-1577
◽
Cited By ~ 11
Author(s):
Hiroaki Kakiuchi
◽
Hiromasa Ohmi
◽
Takahiro Yamada
◽
Shogo Tamaki
◽
Takayuki Sakaguchi
◽
...
Keyword(s):
Thin Film
◽
Atmospheric Pressure
◽
High Frequency
◽
Thin Film Transistors
◽
Atmospheric Pressure Plasma
◽
Very High Frequency
◽
Pressure Plasma
◽
Very High
◽
Bottom Gate
Download Full-text
Rapid Recrystallization of Amorphous Silicon Utilizing Very-High-Frequency Microplasma Jet at Atmospheric Pressure
Japanese Journal of Applied Physics
◽
10.1143/jjap.45.8484
◽
2006
◽
Vol 45
(10B)
◽
pp. 8484-8487
◽
Cited By ~ 9
Author(s):
Mina Ryo
◽
Yusuke Sakurai
◽
Tomohiro Kobayashi
◽
Hajime Shirai
Keyword(s):
Amorphous Silicon
◽
Atmospheric Pressure
◽
High Frequency
◽
Very High Frequency
◽
Very High
Download Full-text
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
10.7567/ssdm.2005.p8-4
◽
2005
◽
Author(s):
Hiroaki Kakiuchi
◽
Hiromasa Ohmi
◽
Yasuhito Kuwahara
◽
Mitsuhiro Matsumoto
◽
Yusuke Ebata
◽
...
Keyword(s):
Solar Cells
◽
Amorphous Silicon
◽
Atmospheric Pressure
◽
High Frequency
◽
High Rate
◽
Very High Frequency
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Very High
Download Full-text
Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma
Journal of Physics D Applied Physics
◽
10.1088/1361-6463/aad47c
◽
2018
◽
Vol 51
(35)
◽
pp. 355203
◽
Cited By ~ 2
Author(s):
Hiroaki Kakiuchi
◽
Hiromasa Ohmi
◽
Kiyoshi Yasutake
Keyword(s):
Electrical Properties
◽
Atmospheric Pressure
◽
High Frequency
◽
Silicon Films
◽
Very High Frequency
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Structural And Electrical Properties
◽
Very High
Download Full-text
Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure
Precision Engineering
◽
10.1016/j.precisioneng.2019.07.017
◽
2019
◽
Vol 60
◽
pp. 265-273
Author(s):
Hiroaki Kakiuchi
◽
Hiromasa Ohmi
◽
Kiyoshi Yasutake
Keyword(s):
Formation Process
◽
Atmospheric Pressure
◽
High Frequency
◽
Low Temperatures
◽
Silicon Oxide
◽
Very High Frequency
◽
Oxide Layers
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Very High
Download Full-text
Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma
ECS Transactions
◽
10.1149/1.3207619
◽
2019
◽
Vol 25
(8)
◽
pp. 405-412
Author(s):
Keita Tabuchi
◽
Kentato Ouchi
◽
Hiromasa Ohmi
◽
Hiroaki Kakiuchi
◽
Kiyoshi Yasutake
Keyword(s):
Atmospheric Pressure
◽
High Frequency
◽
High Rate
◽
Very High Frequency
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Si Films
◽
Very High
Download Full-text
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure
Japanese Journal of Applied Physics
◽
10.1143/jjap.45.3587
◽
2006
◽
Vol 45
(4B)
◽
pp. 3587-3591
◽
Cited By ~ 15
Author(s):
Hiroaki Kakiuchi
◽
Hiromasa Ohmi
◽
Yasuhito Kuwahara
◽
Mitsuhiro Matsumoto
◽
Yusuke Ebata
◽
...
Keyword(s):
Solar Cells
◽
Amorphous Silicon
◽
Atmospheric Pressure
◽
High Frequency
◽
High Rate
◽
Very High Frequency
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Very High
Download Full-text
Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma
Plasma Chemistry and Plasma Processing
◽
10.1007/s11090-010-9242-7
◽
2010
◽
Vol 30
(5)
◽
pp. 579-590
◽
Cited By ~ 6
Author(s):
Hiroaki Kakiuchi
◽
Hiromasa Ohmi
◽
Kei Nakamura
◽
Yoshihito Yamaguchi
◽
Kiyoshi Yasutake
Keyword(s):
Atmospheric Pressure
◽
High Frequency
◽
Room Temperature
◽
Silicon Nitrides
◽
Very High Frequency
◽
High Frequency Plasma
◽
Frequency Plasma
◽
Very High
Download Full-text
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