Study of aluminum nitride films deposited on silicon for fabrication of MEMs devices

In this work, aluminum nitride (AlN) thin films deposited on the silicon (100) by RF magnetron-sputtering were analyzed. Nitrogen and argon plasmas were used in a vacuum system technique, being possible to obtain films oriented to the (oo2) crystallographic direction analyzed by X-ray diffraction (XRD) technique. Scanning electronic microscopy (SEM) was used to obtain the chemical composition (% at.) of AlN thin films. SEM analyses were accomplished to verify the images of the AlN films. Raman spectroscopy was used to obtain the Raman displacement as a function of the light intensity of the beam incident on the AlN films. Therefore, it was possible to reach the peaks of laser radiation absorption (λ = 514 nm) during Raman scattering. Ellipsometry was required to obtain: the roughness (Rz), optical gap (E04), and films thickness. Optical properties of the films depend on the temperature during the deposition. COMSOL software was required to simulate the performance of MEMS device, operating in the match circuit on a few ten of MHz resonance frequency.