A carbon-doping related luminescence band in GaN revealed by below bandgap excitation

2021 ◽  
Vol 130 (5) ◽  
pp. 055703
Author(s):  
F. Zimmermann ◽  
J. Beyer ◽  
F. C. Beyer ◽  
G. Gärtner ◽  
I. Gamov ◽  
...  
Keyword(s):  
Luminescence Band ◽  
Carbon Doping

Pengaruh Pendopingan Karbon Terhadap Struktur Kristal dan Morfologi TIO2

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Frastica Deswardani ◽  
Helga Dwi Fahyuan ◽  
Rimawanto Gultom ◽  
Eif Sparzinanda
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Grain Size ◽  
Tio2 Thin Film ◽  
Crystal Size ◽  
Diffraction Peak ◽  
Carbon Doping ◽  
Tio2 Anatase ◽  
Spray Method ◽  
Carbon Analysis

Telah dilakukan penelitian mengenai pengaruh konsentrasi doping karbon pada lapisan tipis TiO2 yang ditumbuhkan dengan metode spray terhadap struktur kristal dan morfologi TiO2. Hasil karakterisasi SEM menunjukkan bahwa penambahan doping karbon dapat meningkatkan ukuran butir. Lapisan TiO2 doping karbon 8% diperoleh ukuran butir terbesar adalah 1.35 μm, sedangkan ukuran tekecilnya adalah 0.45 μm. Sementara itu, untuk lapisan tipis TiO2 didoping karbon 15% memiliki ukuran butir terbesar yaitu 1.76 μm dan terkecil 0.9 μm. Hasil XRD menunjukkan seluruh puncak difraksi lapisan tipis TiO2 dengan doping karbon 8% dan 15% merupakan TiO2 anatase. Ukuran kristal lapisan TiO2 didoping karbon 8% diperoleh sebesar 638,08 Å dan untuk pendopingan 15% karbon ukuran kristal lapisan tipis TiO2 adalah 638,09 Å, hal ini menunjukkan ukuran kristal kedua sampel tidak mengalami perubahan yang signifikan.   TiO2 thin film with carbon doping has been successfully grown by spray method. The research on the effect of carbon doping on crystal structure and morfology of TiO2 has been prepared by varying carbon concentration (8% and 15% carbon). Analysis of SEM showed that the addition of carbon may increase the grain size. Thin film of TiO2 doped carbon 8% has the largest grain size 1.35 μm, while the smallest grain size is 0.45 μm. Meanwhile, for thin film TiO2 doped carbon 15% has the largest grain size 1.76 μm and smallest 0.9 μm. The XRD results showed the entire diffraction peak of thin film TiO2 doped carbon 8% and 15% were TiO2 anatase. The crystal size of thin film TiO2 doped carbon 8% was obtained at 638.08 Å and for thin film TiO2 doped carbon 15% the crystalline size of TiO2 thin film was 638.09 Å, this shows that the crystal size of both samples did not change significantly.    

Micro X-Ray Diffraction Study of Polycrystalline MgB 2 Wire and Evaluation of Carbon Doping Effect Via Low-Temperature Sintering

2019 ◽  
Author(s):  
Minoru Maeda ◽  
Dipak Patel, Dr. ◽  
Hiroaki Kumakura, Dr. ◽  
Gen Nishijima, Dr. ◽  
Akiyoshi Matsumoto, Dr. ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diffraction Study ◽  
Carbon Doping ◽  
Doping Effect ◽  
Low Temperature Sintering ◽  
X Ray Diffraction ◽  
X Ray

Effects of carbon doping on mechanical, tribological, structural, anti-corrosion and anti-glass-sticking properties of CrNbSiTaZr high entropy alloy coatings

2021 ◽  
Vol 717 ◽  
pp. 138448
Author(s):  
W.H. Kao ◽  
Y.L. Su ◽  
J.H. Horng ◽  
H.M. Wu
Keyword(s):  
Carbon Doping ◽  
High Entropy Alloy ◽  
High Entropy

The origin of the 500 nm luminescence band related to oxygen vacancies in ZrO2

2021 ◽  
pp. 118133
Author(s):  
Ting-Shun Wang ◽  
Meng-Lin Qiu ◽  
Guang-Fu Wang ◽  
Wei-Cheng ◽  
Jin-Fu Zhang ◽  
...  
Keyword(s):  
Luminescence Band ◽  
Oxygen Vacancies

Long Range Functionalization of h-BN Monolayer by Carbon Doping

2016 ◽  
Vol 120 (29) ◽  
pp. 15993-16001 ◽  
Author(s):  
Min Gao ◽  
Masashi Adachi ◽  
Andrey Lyalin ◽  
Tetsuya Taketsugu
Keyword(s):  
Long Range ◽  
Carbon Doping

SELF-TRAPPED EXCITONS IN ORTHORHOMBIC SnBr2

2001 ◽  
Vol 15 (28n30) ◽  
pp. 4009-4012 ◽  
Author(s):  
Y. YAMASAKI ◽  
N. OHNO
Keyword(s):  
Time Dependence ◽  
Low Temperatures ◽  
Luminescence Band ◽  
Radiative Decay ◽  
Time Resolved ◽  
Tunneling Recombination ◽  
Exciton Region ◽  
Time Resolved Photoluminescence ◽  
Stokes Shifts ◽  
2.5 Ev Luminescence

Luminescence properties of SnBr 2 have been studied to reveal the photo-excited exciton relaxation process. Two types of luminescence with large Stokes shifts are found at low temperatures; the 2.2-eV luminescence band produced under the photo-excitation in the first exciton region, and the 2.5-eV luminescence band stimulated by photons with energies above the bandgap. The time-resolved photoluminescence measurements have revealed that the 2.2-eV luminescence comprises fast (1.2 μs) and slow (6.4 μs) exponential decay components, whereas the 2.5-eV luminescence shows the time dependence of I(t)∞ t-0.9. These results suggest that the former band is attributed to the radiative decay of self-trapped excitons, and the latter band would originate from tunneling recombination of holes with the STEL as in the case of lead halides.

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 86 (1) ◽  
pp. 318-324 ◽  
Author(s):  
M. J. Begarney ◽  
L. Li ◽  
B.-K. Han ◽  
D. C. Law ◽  
C. H. Li ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Carbon Tetrachloride ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Carbon Doping ◽  
Etch Pits

Electronic Structure Modulation of Nanoporous Cobalt Phosphide by Carbon Doping for Alkaline Hydrogen Evolution Reaction

2021 ◽  
pp. 2107333
Author(s):  
Wence Xu ◽  
Guilan Fan ◽  
Shengli Zhu ◽  
Yanqin Liang ◽  
Zhenduo Cui ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Carbon Doping ◽  
Cobalt Phosphide ◽  
Structure Modulation

Homogeneous carbon doping of magnesium diboride by high-temperature, high-pressure synthesis

2014 ◽  
Vol 104 (16) ◽  
pp. 162603 ◽  
Author(s):  
M. A. Susner ◽  
S. D. Bohnenstiehl ◽  
S. A. Dregia ◽  
M. D. Sumption ◽  
Y. Yang ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Magnesium Diboride ◽  
Carbon Doping ◽  
High Pressure Synthesis ◽  
Pressure Synthesis ◽  
High Temperature High Pressure

New infrared luminescence band in silicon nanowires

2004 ◽  
Author(s):  
Oleg O. Pikaruk ◽  
Galina Y. Rudko ◽  
Evgeniy G. Gule ◽  
Alla I. Klimovskaya ◽  
Igor P. Ostrovskii
Keyword(s):  
Silicon Nanowires ◽  
Luminescence Band ◽  
Infrared Luminescence
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