Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

2021 ◽  
Vol 119 (1) ◽  
pp. 011601
Author(s):  
Guoxiang Wang ◽  
Fen Liu ◽  
Yegang Lu ◽  
Yimin Chen ◽  
Xiang Shen
2018 ◽  
Vol 6 (34) ◽  
pp. 9081-9092 ◽  
Author(s):  
Weihua Wu ◽  
Bo Shen ◽  
Jiwei Zhai ◽  
Xinyi Liu ◽  
Tianshu Lai ◽  
...  

The effects of a titanium dopant on the phase transition behavior and crystallization mechanism of Ge8Sb92 films were systematically investigated.


2008 ◽  
Vol 1071 ◽  
Author(s):  
Ramanathaswamy Pandian ◽  
Bart J. Kooi ◽  
George Palasantzas ◽  
Jeff Th. M. De Hosson

AbstractBesides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named ‘polarity-dependent resistance (PDR) switching’. The electrical resistance of the film switches between a low- and high-state when the polarity of the applied electric field is reversed. This switching is not connected to the phase-change, as it only occurs in the crystalline phase of the film, but connected to the solid-state electrolytic behavior i.e. high ionic conductivity of (Sb-rich) GeSbTe under an electric field. I-V characteristics of nonoptimized capacitor-like prototype cells of various dimensions clearly exhibited the switching behavior when sweeping the voltage between +1 V and -1 V (starting point: 0 V). The switching was demonstrated also with voltage pulses of amplitudes down to 1 V and pulse widths down to 1 microsecond for several hundred of cycles with resistance contrasts up to 150 % between the resistance states. Conductive atomic force microscopy (CAFM) was used to examine PDR switching at nanoscales in tip-written crystalline marks, where the switching occurred for less than 1.5 V with more than three orders of resistance contrasts. Our experiments demonstrated a novel and technologically important switching mechanism, which consumes less power than the usual phase-change switching and provide opportunity to bring together the two resistance switching types (phase-change and PDR) in a single system to extend the applicability of GeSbTe materials.


2021 ◽  
Vol 22 ◽  
pp. 103897
Author(s):  
Xingzhe Shi ◽  
Changshui Chen ◽  
Songhao Liu ◽  
Guangyuan Li

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
A. Ahmed Simon ◽  
B. Badamchi ◽  
H. Subbaraman ◽  
Y. Sakaguchi ◽  
L. Jones ◽  
...  

AbstractChalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.


2021 ◽  
Vol 9 (2) ◽  
pp. 2170006
Author(s):  
Sébastien Cueff ◽  
Arnaud Taute ◽  
Antoine Bourgade ◽  
Julien Lumeau ◽  
Stephane Monfray ◽  
...  

2017 ◽  
Vol 9 (32) ◽  
pp. 27004-27013 ◽  
Author(s):  
Ruirui Liu ◽  
Xiao Zhou ◽  
Jiwei Zhai ◽  
Jun Song ◽  
Pengzhi Wu ◽  
...  

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