Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

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Deposition temperature dependence of the deep defect density for a‐Si:H films grown by electron cyclotron resonance microwave plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578182 ◽

1992 ◽

Vol 10 (3) ◽

pp. 521-524 ◽

Cited By ~ 1

Author(s):

J. M. Essick ◽

F. S. Pool ◽

Y. H. Shing

Keyword(s):

Temperature Dependence ◽

Cyclotron Resonance ◽

Deposition Temperature ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Defect Density ◽

Electron Cyclotron ◽

Deep Defect ◽

Resonance Microwave

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Temperature Dependence of the Optical Transition Energies of Carbon Nanotubes: The Role of Electron-Phonon Coupling and Thermal Expansion

Physical Review Letters ◽

10.1103/physrevlett.96.127403 ◽

2006 ◽

Vol 96 (12) ◽

Cited By ~ 63

Author(s):

S. B. Cronin ◽

Y. Yin ◽

A. Walsh ◽

Rodrigo B. Capaz ◽

A. Stolyarov ◽

...

Keyword(s):

Carbon Nanotubes ◽

Thermal Expansion ◽

Temperature Dependence ◽

Optical Transition ◽

Phonon Coupling ◽

Transition Energies ◽

Electron Phonon Coupling

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Temperature dependence of direct transition energies in β-FeSi2 epitaxial films on Si(111) substrate

Physics Procedia ◽

10.1016/j.phpro.2011.01.024 ◽

2011 ◽

Vol 11 ◽

pp. 181-184 ◽

Cited By ~ 2

Author(s):

K. Noda ◽

Y. Terai ◽

K. Yoneda ◽

Y. Fujiwara

Keyword(s):

Temperature Dependence ◽

Epitaxial Films ◽

Direct Transition ◽

Transition Energies

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Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100053188 ◽

1982 ◽

Vol 40 ◽

pp. 78-79

Author(s):

Kenneth H. Downing ◽

Robert M. Glaeser

Keyword(s):

Electron Beam ◽

Fatty Acid ◽

Inelastic Scattering ◽

Temperature Dependence ◽

Structural Damage ◽

Direct Result ◽

Second Step ◽

Strong Temperature Dependence ◽

Electron Dose ◽

Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

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Temperature Dependence of Magnetic Domains and Wall Structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009573x ◽

1972 ◽

Vol 30 ◽

pp. 496-497

Author(s):

Sonoko Tsukahara ◽

Tadami Taoka ◽

Hisao Nishizawa

Keyword(s):

Temperature Dependence ◽

Domain Walls ◽

Magnetic Domain ◽

Iron Film ◽

Objective Lens ◽

Lorentz Microscopy ◽

Domain Structures ◽

Wall Structures ◽

Crystal Films ◽

Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

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