Cesium polytungstate in sputtered solar control films. II. Electronic structure and water-induced defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164179 ◽

1996 ◽

Vol 54 ◽

pp. 342-343

Author(s):

S.J. Splinter ◽

J. Bruley ◽

P.E. Batson ◽

D.A. Smith ◽

R. Rosenberg

Keyword(s):

Electronic Structure ◽

Grain Boundaries ◽

Boundary Segregation ◽

Thin Layers ◽

Nominal Composition ◽

Spatially Resolved ◽

Service Lifetime ◽

Heat Treated ◽

Probe Size ◽

Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173595 ◽

1990 ◽

Vol 48 (4) ◽

pp. 92-93

Author(s):

H. Watanabe ◽

B. Kabius ◽

B. Roas ◽

K. Urban

Keyword(s):

Defect Formation ◽

Ion Irradiation ◽

High Resolution Electron Microscopy ◽

Structural Disorder ◽

Flux Lines ◽

Pinning Effect ◽

Magnetic Flux Lines ◽

Resolution Electron ◽

Radiation Induced ◽

Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163265 ◽

1996 ◽

Vol 54 ◽

pp. 160-161

Author(s):

J. Fink

Keyword(s):

Electronic Structure ◽

Conducting Polymers ◽

Conjugated Polymers ◽

Electron Acceptors ◽

Electron Donors ◽

Light Emitting ◽

One Dimensional ◽

New Class ◽

Electrical Conductivities ◽

Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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Electronic Structure and Magnetism of Inorganic Compounds

10.1039/9781847555922 ◽

1973 ◽

Keyword(s):

Electronic Structure ◽

Inorganic Compounds

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Electronic Structure and Magnetism of Inorganic Compounds

10.1039/9781847555977 ◽

1982 ◽

Cited By ~ 1

Keyword(s):

Electronic Structure ◽

Inorganic Compounds

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Doping effects on the geometric and electronic structure of tin clusters

Physical Chemistry Chemical Physics ◽

10.1039/c9cp05124d ◽

2019 ◽

Vol 21 (44) ◽

pp. 24478-24488 ◽

Cited By ~ 1

Author(s):

Martin Gleditzsch ◽

Marc Jäger ◽

Lukáš F. Pašteka ◽

Armin Shayeghi ◽

Rolf Schäfer

Keyword(s):

Density Functional Theory ◽

Electronic Structure ◽

Density Functional ◽

Beam Deflection ◽

Functional Theory ◽

Doping Effects ◽

Depth Analysis ◽

Trajectory Simulations

In depth analysis of doping effects on the geometric and electronic structure of tin clusters via electric beam deflection, numerical trajectory simulations and density functional theory.

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A novel ligand with –NH2 and –COOH-decorated Co/Fe-based oxide for an efficient overall water splitting: dual modulation roles of active sites and local electronic structure

Catalysis Science & Technology ◽

10.1039/d0cy01109f ◽

2020 ◽

Vol 10 (18) ◽

pp. 6266-6273

Author(s):

Yalan Zhang ◽

Zebin Yu ◽

Ronghua Jiang ◽

Jung Huang ◽

Yanping Hou ◽

...

Keyword(s):

Electronic Structure ◽

Water Splitting ◽

Energy Demand ◽

Active Sites ◽

Electrode Materials ◽

Global Energy ◽

Overall Water Splitting ◽

Local Electronic Structure ◽

Electrochemical Water Splitting

Excellent electrochemical water splitting with remarkable durability can provide a solution to satisfy the increasing global energy demand in which the electrode materials play an important role.

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