Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

2021 ◽  
Vol 119 (6) ◽  
pp. 063502
Author(s):  
Joshua W. Kleppinger ◽  
Sandeep K. Chaudhuri ◽  
OmerFaruk Karadavut ◽  
Krishna C. Mandal
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Current Flow ◽  
Radiation Detectors ◽  
Deep Levels ◽  
Flow Mechanism

scholarly journals On the Current Flow Mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky Barrier Diodes

2007 ◽  
Author(s):  
A. E. Belyaev ◽  
N. S. Boltovets ◽  
V. N. Ivanov ◽  
R. V. Konakova ◽  
Ya. Ya. Kudryk ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Current Flow ◽  
Schottky Barrier Diodes ◽  
Flow Mechanism

Role of hybridization on the Schottky barrier height of carbon nanotube field effect transistors

2009 ◽  
Vol 79 (12) ◽  
Author(s):  
D. Casterman ◽  
M. M. De Souza ◽  
A. Tahraoui ◽  
C. Durkan ◽  
W. I. Milne
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors

Current Flow Mechanism in Schottky-Barrier MOSFETs and Application to the 1T-DRAM

2008 ◽  
Author(s):  
S. J. Choi ◽  
J. W. Han ◽  
S. Kim ◽  
C. Choi ◽  
M. Jang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Current Flow ◽  
Flow Mechanism

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

2009 ◽  
Vol 56 (11) ◽  
pp. 2770-2777 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Alvin Tian-Yi Koh ◽  
Kian-Ming Tan ◽  
Tsung-Yang Liow ◽  
Dong Zhi Chi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Height Reduction

Passivation of Surface and Bulk Defects in InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar ◽  
N. Balasubramanian ◽  
V. Premachandran
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Depth Profile ◽  
Hydrogen Plasma ◽  
Deep Levels ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

scholarly journals Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Kung-Chu Chen ◽  
Kuan-Wun Lin ◽  
Jenn-Gwo Hwu
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Bias Current ◽  
Tunnel Diodes ◽  
Current Behavior

The Role of the Mercury-Si Schottky-Barrier Height in<tex>$Psi$</tex>-MOSFETs

2004 ◽  
Vol 51 (9) ◽  
pp. 1380-1384 ◽  
Author(s):  
J.Y. Choi ◽  
S. Ahmed ◽  
T. Dimitrova ◽  
J.T.C. Chen ◽  
D.K. Schroder
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Investigation of Platinum Silicide Schottky Barrier Height Modulation using a Dopant Segregation Approach

2008 ◽  
Vol 1070 ◽  
Author(s):  
Nicolas Breil ◽  
Aomar Halimaoui ◽  
Emmanuel Dubois ◽  
Evelyne Lampin ◽  
Guilhem Larrieu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Depth Profiling ◽  
Dopant Activation ◽  
Dopant Segregation ◽  
Platinum Silicide ◽  
Plasma Doping ◽  
Sims Depth Profiling

ABSTRACTThe role of the dopant activation on the segregation efficiency during the formation of platinum silicide (PtSi) is investigated in this paper. Using an implant before silicidation technique, we first demonstrate an important Schottky Barrier Height (SBH) modulation for As and B segregation. In the case of As, we highlight that an activation of the dopants before the silcidation does not impact the SBH modulation. On the contrary, an important impact of the dopant crystalline position is evidenced for Boron. Also, a comparison of conventional implant versus a PLAsma Doping (PLAD) highlights the suitability of the latter implantation tool for the SBH modulation. Those results are interpreted on the basis of SIMS depth profiling.

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