Passivation of Surface and Bulk Defects in InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar ◽  
N. Balasubramanian ◽  
V. Premachandran
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Depth Profile ◽  
Hydrogen Plasma ◽  
Deep Levels ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

W/Si1-xGex Schottky Barrier: Effect of Stress and Composition

1994 ◽  
Vol 338 ◽  
Author(s):  
F. Meyer ◽  
V. Aubry ◽  
P. Warren ◽  
D. Dutartre
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Conduction Band ◽  
Schottky Barrier Height ◽  
Barrier Effect ◽  
P Type

ABSTRACTThe Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.

Evolution of Fermi level position and Schottky barrier height at Ni/MgO(001) interface

2005 ◽  
Vol 599 (1-3) ◽  
pp. 255-261 ◽  
Author(s):  
Y.Y. Mi ◽  
S.J. Wang ◽  
Y.F. Dong ◽  
J.W. Chai ◽  
J.S. Pan ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Fermi Level Position

Surface Fermi Level Position of Diamond Treated with Plasma

1994 ◽  
Vol 339 ◽  
Author(s):  
Takashi Sugino ◽  
Yoshifumi Sakamoto ◽  
Atsuhiko Furukawa ◽  
Junji shirafuji
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Valence Band ◽  
Contact Potential Difference ◽  
Band Edge ◽  
Valence Band Edge ◽  
Contact Potential ◽  
Band Bending ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe surface Fermi level position of undoped epitaxial diamond layers is estimated from contact potential difference between Au reference and diamond measured by Kelvin probe method. The surface Fermi level position of the as-grown layer is located at the energy of 0.75 eV above the valence band edge. O2 plasma treatment leads to an upward shift of the surface Fermi level position to an energy of 1.89 eV from the valence band edge. The surface Fermi level is located at an energy of 0.97 eV above the valence band edge after H2 plasma treatment. Reversible change in the surface Fermi level position is found between O2 and H2plasma treatments. A change in the band bending is observed at the surface of polycrystalline diamond films treated with various ways by X-ray photoclcctron spectroscopy (XPS) analysis. A variation in the current-voltage characteristics of epitaxial and polycrystalline diamonds treated with O2 and H2 plasmas can be qualitatively explained in terms of a change in the band bending due to the shift of the surface Fermi level position.

X-ray Photoemission Determination of the Surface Fermi Level Motion and Pinning on n- and p-GaN during the Formation of Au, Ni, and Ti Metal Contacts

2001 ◽  
Vol 693 ◽  
Author(s):  
Kimberly A. Rickert ◽  
Jong Kyu Kim ◽  
Jong-Lam Lee ◽  
Franz J. Himpsel ◽  
Arthur B. Ellis ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Photoemission Spectroscopy ◽  
Metal Contacts ◽  
X Ray ◽  
Fermi Level Position ◽  
Fermi Edge ◽  
Metal Overlayers ◽  
Surface Fermi Level

AbstractSynchrotron radiation-based x-ray photoemission spectroscopy was used to study the Fermi level position within the band gap for thin metal overlayers of Au, Ni, and Ti on n-GaN and p-GaN. The Fermi level position was determined with the measured Fermi edge of the metal on the sample in order to correct for the presence of non-equilibrium effects. There are two different behaviors observed for the three metals studied. For Au and Ti, the surface Fermi positions on n-GaN and p-GaN are roughly 0.5 eV apart within the band gap. For Ni, the n-GaN and p-GaN have a Schottky barrier that forms at the same place at the gap.

Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires

2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap ◽  
Semiconductor Nanowire ◽  
Fermi Level Position

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.

scholarly journals Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Yi-Hsun Chen ◽  
Chih-Yi Cheng ◽  
Shao-Yu Chen ◽  
Jan Sebastian Dominic Rodriguez ◽  
Han-Ting Liao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Surface Oxidation ◽  
Tunneling Barrier ◽  
Experimental Realization ◽  
Gap States

AbstractIn two-dimensional (2D)-semiconductor-based field-effect transistors and optoelectronic devices, metal–semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal–2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin-surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide–2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm2/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized-monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface States ◽  
Hydrogen Atoms ◽  
Fermi Level Pinning ◽  
Gap States

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

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