scholarly journals Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115323
Author(s):  
Ta-Shun Chou ◽  
Palvan Seyidov ◽  
Saud Bin Anooz ◽  
Raimund Grüneberg ◽  
Thi Thuy Vi Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Homoepitaxial Growth

Homoepitaxial growth of low roughness SrTiO3 by pulsed laser deposition: application to YBa2Cu3O7-x -based thin films and superlattices

1994 ◽  
Vol 141 (1-2) ◽  
pp. 141-149 ◽  
Author(s):  
J.P. Contour ◽  
D. Ravelosona ◽  
C. Sant ◽  
C. Frétigny ◽  
C. Dolin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Homoepitaxial Growth

scholarly journals Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sebastian Molatta ◽  
Silvia Haindl ◽  
Sascha Trommler ◽  
Michael Schulze ◽  
Sabine Wurmehl ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Iron Chalcogenide ◽  
Homoepitaxial Growth ◽  
Interface Control ◽  
Chalcogenide Thin Films

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

2016 ◽  
Vol 108 (18) ◽  
pp. 182105 ◽  
Author(s):  
Subrina Rafique ◽  
Lu Han ◽  
Marko J. Tadjer ◽  
Jaime A. Freitas ◽  
Nadeemullah A. Mahadik ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Homoepitaxial Growth ◽  
Pressure Chemical

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Homoepitaxial Growth of Diamond Single-Phase Thin Films by Pulsed Laser Ablation of Graphite

2001 ◽  
Vol 40 (Part 2, No. 6A) ◽  
pp. L573-L575 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Kunihito Nagayama
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Single Phase ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Homoepitaxial Growth

Molecular Beam Deposition of Organic Nonlinear Optical Materials

1995 ◽  
Vol 413 ◽  
Author(s):  
R. Schlesser ◽  
T. Dietrich ◽  
Z. Sitar ◽  
P. Günter
Keyword(s):  
Thin Films ◽  
Optical Materials ◽  
Nonlinear Optical ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Growth Conditions ◽  
Nonlinear Optical Materials ◽  
Recrystallization Process ◽  
Island Growth ◽  
Homoepitaxial Growth

ABSTRACTThin films of the organic nonlinear optical materials 4‘-nitrobenzylidene-3-acetamino-4- methoxy-aniline (MNBA), and 2-cyclooctylamino-5-nitropyridine (COANP) have been deposited by organic molecular beam epitaxy. Homoepitaxial growth has been demonstrated for both materials. MNBA thin films were grown heteroepitaxially on lattice-matched ethylenediammonium terephthalate (EDT) substrates. Under optimum growth conditions, similar to those valid for homoepitaxial growth of the same material, i.e. at substrate temperatures of 80°C, and growth rates of 0.1 Å/s, highly oriented films were deposited in an island growth mode. Nonlinear optical second-harmonic generation experiments confirmed the macroscopic orientation of the deposited MNBA thin films. Growth experiments with MNBA and COANP on inorganic substrates lead to amorphous or polycrystalline films, depending primarily on the substrate temperature. A spontaneous recrystallization process, occurring in COANP thin films under ambiant conditions, led to the formation of macroscopic nonlinear optically active domain structures.

Homoepitaxial growth of a-axis oriented YBa2Cu3O7 − δ thin films on single crystals

1997 ◽  
Vol 179 (3-4) ◽  
pp. 451-458 ◽  
Author(s):  
M. Konishi ◽  
J.G. Wen ◽  
Y. Matsunaga ◽  
Y. Enomoto ◽  
S. Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Homoepitaxial Growth
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