Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

2022 ◽  
Vol 120 (1) ◽  
pp. 013102
Author(s):  
S. Gupta ◽  
R. Ohshima ◽  
Y. Ando ◽  
T. Endo ◽  
Y. Miyata ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Perpendicular Magnetic Anisotropy ◽  
Metal Contacts ◽  
Electrical Transport Properties

scholarly journals Pt and CoB trilayer Josephson $$\pi $$ junctions with perpendicular magnetic anisotropy

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Satchell ◽  
T. Mitchell ◽  
P. M. Shepley ◽  
E. Darwin ◽  
B. J. Hickey ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Electrical Transport ◽  
Josephson Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Alloy Layer ◽  
Dead Layer ◽  
Ferromagnetic Alloy ◽  
Electrical Transport Properties ◽  
Potential Applications ◽  
Zero Phase

AbstractWe report on the electrical transport properties of Nb based Josephson junctions with Pt/Co$$_{68}$$ 68 B$$_{32}$$ 32 /Pt ferromagnetic barriers. The barriers exhibit perpendicular magnetic anisotropy, which has the main advantage for potential applications over magnetisation in-plane systems of not affecting the Fraunhofer response of the junction. In addition, we report that there is no magnetic dead layer at the Pt/Co$$_{68}$$ 68 B$$_{32}$$ 32 interfaces, allowing us to study barriers with ultra-thin Co$$_{68}$$ 68 B$$_{32}$$ 32 . In the junctions, we observe that the magnitude of the critical current oscillates with increasing thickness of the Co$$_{68}$$ 68 B$$_{32}$$ 32 strong ferromagnetic alloy layer. The oscillations are attributed to the ground state phase difference across the junctions being modified from zero to $$\pi $$ π . The multiple oscillations in the thickness range $$0.2~\leqslant ~d_\text {CoB}~\leqslant ~1.4$$ 0.2 ⩽ d CoB ⩽ 1.4  nm suggests that we have access to the first zero-$$\pi $$ π and $$\pi $$ π -zero phase transitions. Our results fuel the development of low-temperature memory devices based on ferromagnetic Josephson junctions.

Structural, Magnetic and Electric Transport Properties for Co2FeAl0.5Si0.5/n-GaAs Junctions

2015 ◽  
Vol 233-234 ◽  
pp. 411-414
Author(s):  
Nobuki Tezuka ◽  
Tatsuya Saito ◽  
Masashi Matsuura ◽  
Satoshi Sugimoto
Keyword(s):  
Magnetic Anisotropy ◽  
Transport Properties ◽  
Magnetic Moment ◽  
Electrical Transport ◽  
Anisotropy Field ◽  
Electric Transport ◽  
Electrical Transport Properties ◽  
Magnetic Anisotropy Energy ◽  
Cross Sectional ◽  
Non Local

The authors have been investigated structural, magnetic and electrical transport properties for CFAS/n-GaAs junctions. From cross sectional TEM image, RHEED and XRD patternz of thin CFAS films, CFAS films found to be grown epitaxially on GaAs, and shown L21-ordered structure for the films with substrate temperature (TCFAS) of 300°C and 400°C. It is hard to find some additional phase around the interface between CFAS and GaAs. Magnetic moment (and magnetic anisotropy energy) of CFAS increased (and decreased) with increasingTCFASup to 300°C and decreased (and increased) atTCFASof 400°C, respectively. The asymmetry of current (J)-voltage (V) curve for the junction withTCFAS=300°C was found to be larger than those for other junctions. It was found there is the relation betweenTCFASdependence of spin signal obtained by three terminal Hanle or four terminal non-local measurement and that of magnetic moment, magnetic anisotropy field or asymmetry ofJ-Vcurve.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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