Bulk photovoltaic effect in ferroelectrics and the localization of charge carriers

1980 ◽  
Vol 29 (1) ◽  
pp. 41-42 ◽  
Author(s):  
E. V. Bursian ◽  
Ya. G. Girshberg ◽  
N. N. Trunov
Keyword(s):  
Photovoltaic Effect ◽  
Charge Carriers ◽  
Localization Of Charge Carriers

Localization of charge carriers by Pr in theTl2Ba2Ca1−xPrxCu2Oysystem

2002 ◽  
Vol 66 (21) ◽  
Author(s):  
S. N. Bhatia ◽  
P. Chowdhury ◽  
S. Gupta ◽  
B. D. Padalia
Keyword(s):  
Charge Carriers ◽  
Localization Of Charge Carriers

Electronic Functions in Liquid-Crystalline Nanostructures with High Polarization

MRS Advances ◽  
2019 ◽  
Vol 4 (31-32) ◽  
pp. 1733-1740
Author(s):  
Masahiro Funahashi
Keyword(s):  
Liquid Crystalline ◽  
Carrier Transport ◽  
Ferroelectric Phase ◽  
Photovoltaic Effect ◽  
Charge Carriers ◽  
Side Chain ◽  
Electronic Charge ◽  
Internal Electric Field ◽  
Alkyl Side Chain ◽  
Perylene Bisimide

AbstractMultifunctionality was created by coupling an electronic charge carrier transport with ionic conductivity or ferroelectricity in polarized liquid crystal phases. Liquid-crystalline perylene bisimide derivatives bearing cyclotetrasiloxane rings and triethylene oxide chains formed nanosegregated columnar structures which could conduct ions as well as electrons. The spin-coated thin films could be insolubilized by the exposure on acid vapors and display electrochromism. Phenylterthiophene derivatives bearing a chiral alkyl side chain exhibited a ferroelectric phase, in which a photovoltaic effect was caused by the interaction between photogenerated charge carriers with the internal electric field formed by the spontaneous polarization of the ferroelectric phase.

New mechanisms of localization of charge carriers in nanosilicon

2004 ◽  
Vol 46 (1) ◽  
pp. 45-48
Author(s):  
I. V. Blonskyy ◽  
A. Yu. Vakhnin ◽  
V. N. Kadan ◽  
A. K. Kadashchuk
Keyword(s):  
Charge Carriers ◽  
Localization Of Charge Carriers

Effect of Interfaces on the Properties of Polycrystalline Thin-Film PZT Ferroelectric Capacitors

2006 ◽  
Vol 966 ◽  
Author(s):  
Lyuba A. Delimova ◽  
Igor Grekhov ◽  
Dmitri Mashovets ◽  
Ilya Titkov ◽  
Valentin Afanasjev ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Heterogeneous Medium ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Charge Carriers ◽  
Polycrystalline Thin Film ◽  
Field Interaction ◽  
Polarization Charge ◽  
Ferroelectric Capacitors

ABSTRACTA photocurrent directed opposite to ferroelectric (FE) polarization is observed in short-circuit thin-film polycrystalline Pt/PZT/Ir structures. The direction and magnitude of photocurrent are defined by the sign and magnitude of the FE polarization. A model based on a photovoltaic effect with characteristics determined by polarization of PZT grains is proposed. The model considers the field interaction of FE polarization charge with the charge carriers in intergranular PbO channel. Thin-film FE capacitor is considered as a photosensitive heterogeneous medium, where the conduction of PbO channels along PZT grain boundaries is controlled by FE polarization.

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

2012 ◽  
Vol 46 (8) ◽  
pp. 998-1002 ◽  
Author(s):  
E. A. Shevchenko ◽  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
A. A. Sitnikova ◽  
S. V. Ivanov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Charge Carriers ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Localization Of Charge Carriers

scholarly journals Graphene Schottky Junction on Pillar Patterned Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 659 ◽  
Author(s):  
Giuseppe Luongo ◽  
Alessandro Grillo ◽  
Filippo Giubileo ◽  
Laura Iemmo ◽  
Mindaugas Lukosius ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Light Exposure ◽  
Photovoltaic Effect ◽  
Reverse Current ◽  
Charge Carriers ◽  
Graphene Monolayer ◽  
Temperature Dependent ◽  
Thermal Generation ◽  
Photo Response

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector.

scholarly journals Localization of charge carriers in layered crystals MexTiSe2 (Me = Cr, Mn, Cu) studied by the resonant photoemission

2013 ◽  
Vol 114 (13) ◽  
pp. 133704 ◽  
Author(s):  
Y. M. Yarmoshenko ◽  
A. S. Shkvarin ◽  
M. V. Yablonskikh ◽  
A. I. Merentsov ◽  
A. N. Titov
Keyword(s):  
Charge Carriers ◽  
Resonant Photoemission ◽  
Layered Crystals ◽  
Localization Of Charge Carriers

Influence of Mn Site Substitution on Electrical Resistivity and Magnetoresistance Properties of Rare Earth Manganite

2014 ◽  
Vol 1047 ◽  
pp. 123-129 ◽  
Author(s):  
Tejas M. Tank ◽  
D. Bhargava ◽  
V. Sridharan ◽  
S.S. Samatham ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Density Of State ◽  
Spin Dependent Scattering ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Sn Substitution ◽  
Localization Of Charge Carriers

We investigate the effects of Cr, Ru and Sn substitution on electrical resistivity and magnetoresistance property of polycrystalline samples La0.67Sr0.33Mn1-xBxO3(x = 0, 0.05; B= Ru, Cr and Sn) compounds. The value of M-I transition temperature (TP) decreases while resistivity increases with Cr, Ru and Sn substitution, moreover, the largest low-temperature magnetoresistance (MR %) is found at magnetic field dependent (Isotherm), which suggest that the spin-dependent scattering from internal grain regions is also responsible for the low-temperature MR %. Resistivity data have been fitted with the variable range hopping model to estimate the density of state at Fermi level. It was observed that the substitution of various transition metals in the Mn-site leads to a decrease in conductivity of the doped manganite samples, with conduction being controlled by the disorder induced localization of charge carriers.

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