Design of High Gain and High Bandwidth Operational Transconductance Amplifier (OTA)

Author(s):  
Shikha Soni ◽  
Vandana Niranjan ◽  
Ashwni Kumar
Author(s):  
Priti Gupta ◽  
Sanjay Kumar Jana

This paper deals with the designing of low-power transconductance–capacitance-based loop filter. The folded cascode-based operational transconductance amplifier (OTA) is designed in this paper with the help of quasi-floating bulk MOSFET that achieved the DC gain of 88.61[Formula: see text]dB, unity gain frequency of 97.86[Formula: see text]MHz and power consumption of 430.62[Formula: see text][Formula: see text]W. The proposed OTA is compared with the exiting OTA structure which showed 19.50% increase in DC gain and 15.11% reduction in power consumption. Further, the proposed OTA is used for the designing of transconductance–capacitance-based loop filter that has been operated at [Formula: see text]3[Formula: see text]dB cut-off frequency of 30.12[Formula: see text]MHz with the power consumption of 860.90[Formula: see text][Formula: see text]W at the supply voltage of [Formula: see text][Formula: see text]V. The transistor-level simulation has been done in 0.18[Formula: see text][Formula: see text]m CMOS process.


The paper presents a sub-volt design of highly precise second-generation current conveyor (CCII  ) using Miller compensated Operational Transconductance Amplifier (OTA) designed using bulk driven quasi-floating gate (BDQFG) MOSFET. The bulk-driven approach help in working of proposed CCII  at low supply voltage. Moreover, followed BDQFG technique results in improves the transconductance and frequency response of the circuit over standalone bulk-driven technique. The proposed CCII  operates at  0.4V. Other performances which encourage its wide applicability are in terms of high current range and high bandwidth. The analysis of proposed current conveyor is carried in 0.18 m twin-well CMOS technology using HSpice


2021 ◽  
Vol 7 (4) ◽  
pp. 103-110
Author(s):  
Rajesh Durgam ◽  
S. Tamil ◽  
Nikhil Raj

In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as a result increases the drain-to-source voltage of linear mode transistor thus changing it to saturation. This change of mode boosts the effective transconductance of self cascode MOSFET. The proposed operational transconductance amplifier when compared to its conventional showed improvement in DC gain by 30dB and also the unity gain bandwidth increases by 6 fold. The MOS models used for amplifier design are of 0.18µm CMOS technology at supply of 0.5V.


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