A nonlinear current mirror method for improving the slew rate of subthreshold current recycling OTAs

2021 ◽  
pp. 1-18
Author(s):  
Jinfeng Yan ◽  
Yongqing Wang ◽  
Liyuan Dong
Keyword(s):  
Current Mirror ◽  
Slew Rate ◽  
Subthreshold Current

Low Power Operational Transconductance Amplifier (OTA) with Enhanced DC Gain and Slew-Rate

2013 ◽  
Vol 411-414 ◽  
pp. 1645-1648
Author(s):  
Xiao Zong Huang ◽  
Lun Cai Liu ◽  
Jian Gang Shi ◽  
Wen Gang Huang ◽  
Fan Liu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Cmos Technology ◽  
Optimization Techniques ◽  
Current Mirror ◽  
Slew Rate ◽  
Operational Transconductance Amplifier ◽  
Theory Analysis ◽  
Transconductance Amplifier ◽  
Dc Gain ◽  
Simulation Results

This paper presents a low-voltage differential operational transconductance amplifier (OTA) with enhanced DC gain and slew-rate. Based on the current mirror OTA topology, the optimization techniques are discussed in this work. The proposed structure achieves enhanced DC gain, unit gain frequency (UGF) and slew-rate (SR) with adding four devices. The design of the OTA is described with theory analysis. The OTA operates at the power supply of 1.8V. Simulation results for 0.18μm standard CMOS technology show that the DC gain increases from 60.6dB to 65dB, the UGF is optimized from 2.5MHz to 4.3MHz, the SR is enhanced from 0.88 V/μs to 4.8 V/μs with close power consumption dramatically.

Nested-Current-Mirror Rail-to-Rail-Output Single-Stage Amplifier With Enhancements of DC Gain, GBW and Slew Rate

2015 ◽  
Vol 50 (10) ◽  
pp. 2353-2366 ◽  
Author(s):  
Zushu Yan ◽  
Pui-In Mak ◽  
Man-Kay Law ◽  
Rui P. Martins ◽  
Franco Maloberti
Keyword(s):  
Single Stage ◽  
Current Mirror ◽  
Slew Rate ◽  
Rail To Rail ◽  
Dc Gain

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Erratum: Adjustable bidirectional MOS current mirror/amplifier

1989 ◽  
Vol 25 (21) ◽  
pp. 1468
Author(s):  
Z. Wang ◽  
W. Guggenbühl
Keyword(s):  
Current Mirror
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