An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET
2019 ◽
Vol 9
(2)
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pp. 291-297
Keyword(s):
Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.
2013 ◽
Vol 60
(3)
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pp. 1122-1127
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2019 ◽
Vol 14
(6)
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pp. 868-876
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2018 ◽
Vol 55
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pp. 75-81
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Keyword(s):
2008 ◽
Vol 4
(1)
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pp. 98-103
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2014 ◽
Vol 14
(1)
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pp. 280-287
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Keyword(s):
2016 ◽
Vol 15
(4)
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pp. 1316-1325
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Keyword(s):