Experimental behaviour and two-dimensional simulations of MOS transistors in weak inversion region

1981 ◽  
Vol 51 (3) ◽  
pp. 221-224
Author(s):  
F. RUNOVC ◽  
T. ARNBORG ◽  
K. BJÖRKQVIST
2013 ◽  
Vol 303-306 ◽  
pp. 1798-1802
Author(s):  
Bill Ma ◽  
Feng Qi Yu

This paper proposes an innovative CMOS band-gap reference (BGR) topology with a curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism is analyzed thoroughly and the corresponding BGR circuit has been implemented in standard CMOS 0.18u technology. The proposed BGR achieves 1.76 ppm/°C in the range of -40°C to 120°C at 1.2V supply voltage. In addition, it consumes only 30uA current.


Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.


2004 ◽  
Vol 814 ◽  
Author(s):  
R. K. Khillan ◽  
Y. Su ◽  
K. Varahramyan

AbstractWe present the studying of oxygen and moisture traps in MEH-PPV through the MIS Capacitance – Voltage (C-V) analysis, and the Attenuated Total Reflection Infrared (ATR IR) spectroscopy technique. The presence of oxygen studied by ATR IR has also been verified by optical images from high resolution optical microscope. In quasi-static C-V measurements of the MIS (Al/MEH-PPV/p-Si) capacitors made, an extension of the weak inversion region was measured before strong inversion, which becomes more pronounced with aging. This increase in the weak inversion region is attributed to electron trapping by oxygen to form negative ions in the MEH-PPV layer. ATR IR spectroscopy shows the formation of carbonyl peak at 1651 cm−1 with aging, which is due to the presence of oxygen. Both the C-V analysis and Attenuated Total Reflection IR Spectroscopy are powerful tools for investigating the degradation of MEH-PPV polymer.


1982 ◽  
Vol 25 (3) ◽  
pp. 177-183 ◽  
Author(s):  
Alfred Schütz ◽  
Siegfried Selberherr ◽  
Hans W. Pötzl

1989 ◽  
Vol 158 ◽  
Author(s):  
D.T. Grider ◽  
M.C. Özttürk ◽  
J.J. Wortman ◽  
M.A. Littlejohn ◽  
Y. Zhong ◽  
...  

ABSTRACTSelective depositions of germanium thin films have been investigated in a cold-wall, lamp heated rapid thermal processor. Films were deposited at low pressures (1 Torr-8 Torr) using the thermal decomposition of germane. Selectivity was maintained throughout the temperature range investigated, 350°C-600°C. Growth rates as high as 800 Å/min were obtained at 425°C where deposition is controlled by the surface reactions, making germanium compatible with the throughput requirements of single wafer manufacturing. Three dimensional growth was seen at temperatures above 450°C resulting in a rough surface morphology. Smooth films were deposited below 450°C with the films characterized by two dimensional growth. In this work, germanium is considered as a potential material to fabricate MOS transistors with raised source and drain junctions (UPMOS). Kelvin structures were fabricated to study the effect of the intermediate germanium layer between aluminum and silicon on contact resistance. It is shown that contact resistivity is improved by approximately 17% using an Al/p-Ge/p+-Si structure. In this work, it is also shown that titanium germanide formation can be used as a means of reducing the resistivity of the Ge buffer layer.


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