Effect of rapid thermal annealing on optical properties of zinc sulphide thin films

2016 ◽  
Vol 33 (3) ◽  
pp. 181-185 ◽  
Author(s):  
H. Kumar ◽  
P. Ram ◽  
M. Singh
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zinc Sulphide

Influence of Rapid Thermal Annealing on The Structural and Optical Properties of Pulsed Laser Deposited SnS Thin Films

2015 ◽  
Vol 36 (7) ◽  
pp. 811-820
Author(s):  
刘 磊 LIU Lei ◽  
马明杰 MA Ming-jie ◽  
刘丹丹 LIU Dan-dan ◽  
郭慧尔 GUO Hui-er ◽  
史成武 SHI Cheng-wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Sns Thin Films

Structure and optical properties of HfO2 thin films on silicon after rapid thermal annealing

2010 ◽  
Vol 32 (3) ◽  
pp. 432-435 ◽  
Author(s):  
Tingting Tan ◽  
Zhengtang Liu ◽  
Hongcheng Lu ◽  
Wenting Liu ◽  
Hao Tian
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

2006 ◽  
Vol 100 (11) ◽  
pp. 113515 ◽  
Author(s):  
Jong Hoon Kim ◽  
Byung Du Ahn ◽  
Choong Hee Lee ◽  
Kyung Ah Jeon ◽  
Hong Seong Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

Optical Properties of Growth Phases Formed by Rapid Thermal Annealing of MoSix thin Films on Si (100)

1991 ◽  
Vol 224 ◽  
Author(s):  
G. Srinivas ◽  
R.S. Rastogi ◽  
V.D. Vankar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
Pronounced Increase ◽  
Amorphous Thin Films ◽  
Glancing Angle ◽  
Stress Variations

AbstractAmorphous thin films were deposited by co-sputtering Mo and Si on Si(100) single crystals. Rapid thermal annealing at 700, 800 and 1050°C for 30 sec. resulted in the growth of hexagonal and tetragonal phases of MoSi2 as revealed by glancing angle x-ray diffraction. The optical properties of these films were studied by spectroscopic ellipsometry in the range 1.0 to 5.0 eV. As deposited films showed both metallic and semiconducting features in the <ε1> and <ε2> spectra. As a result of annealing at 700 and 800°C, pronounced increase in <ε1> was obtained. Annealing at 1050°C resulted in decrease of the values of <ε2>. Surface morphology, density changes and stress variations associated with recrystallization and compound formation are proposed to account for these observations. The peaks in <ε2> spectra are found to be interband transitions in the MoSi2 structures. These results are in confirmity with the EELS and UPS studies and theoretically calculated band structure of MoSi2.

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