Optical Properties of Growth Phases Formed by Rapid Thermal Annealing of MoSix thin Films on Si (100)

1991 ◽  
Vol 224 ◽  
Author(s):  
G. Srinivas ◽  
R.S. Rastogi ◽  
V.D. Vankar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
Pronounced Increase ◽  
Amorphous Thin Films ◽  
Glancing Angle ◽  
Stress Variations

AbstractAmorphous thin films were deposited by co-sputtering Mo and Si on Si(100) single crystals. Rapid thermal annealing at 700, 800 and 1050°C for 30 sec. resulted in the growth of hexagonal and tetragonal phases of MoSi2 as revealed by glancing angle x-ray diffraction. The optical properties of these films were studied by spectroscopic ellipsometry in the range 1.0 to 5.0 eV. As deposited films showed both metallic and semiconducting features in the <ε1> and <ε2> spectra. As a result of annealing at 700 and 800°C, pronounced increase in <ε1> was obtained. Annealing at 1050°C resulted in decrease of the values of <ε2>. Surface morphology, density changes and stress variations associated with recrystallization and compound formation are proposed to account for these observations. The peaks in <ε2> spectra are found to be interband transitions in the MoSi2 structures. These results are in confirmity with the EELS and UPS studies and theoretically calculated band structure of MoSi2.

Formation of TiO2 Nanorings Due to Rapid Thermal Annealing of Swift Heavy Ion Irradiated Films

2008 ◽  
Vol 8 (9) ◽  
pp. 4387-4394 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
I. Sulania ◽  
A. M. Narsale ◽  
D. Kanjilal ◽  
Varsha Bhattacharyya
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Amorphous Thin Films ◽  
Atomic Force ◽  
Swift Heavy Ion ◽  
Glancing Angle ◽  
Spectroscopy Optical

Amorphous thin films of TiO2 deposited by Pulsed Laser Deposition (PLD) method are irradiated by Swift Heavy Ion (SHI) beam. The irradiated films are subsequently annealed by Rapid Thermal Annealing (RTA) method. Atomic Force Microscopy (AFM) study reveals formation of nano-rings on the surface after RTA processing. Phase change is identified by Glancing Angle X-ray Diffraction (GAXRD) and Raman spectroscopy. Optical characterisation is carried out by UV-VIS absorption spectroscopy. Though no shift of absorption edge is observed after irradiation, RTA processing does show redshift.

Influence of Rapid Thermal Annealing on The Structural and Optical Properties of Pulsed Laser Deposited SnS Thin Films

2015 ◽  
Vol 36 (7) ◽  
pp. 811-820
Author(s):  
刘 磊 LIU Lei ◽  
马明杰 MA Ming-jie ◽  
刘丹丹 LIU Dan-dan ◽  
郭慧尔 GUO Hui-er ◽  
史成武 SHI Cheng-wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Sns Thin Films

Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films

2012 ◽  
Vol 12 (3) ◽  
pp. 834-840 ◽  
Author(s):  
Xing Zhao ◽  
Erjia Liu ◽  
R.V. Ramanujan ◽  
Jingsheng Chen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Thin Films ◽  
Doped Zno

Effect of deposition pressure on the structural and optical properties of Ga2O3films obtained by thermal post-crystallization

CrystEngComm ◽  
2018 ◽  
Vol 20 (1) ◽  
pp. 133-139 ◽  
Author(s):  
Yikai Liao ◽  
Shujie Jiao ◽  
Shaofang Li ◽  
Jinzhong Wang ◽  
Dongbo Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Deposition Pressure ◽  
Amorphous Thin Films

β-Ga2O3films have been obtained by thermal annealing of amorphous thin films that were deposited by radio frequency magnetron sputtering.

Structure and optical properties of HfO2 thin films on silicon after rapid thermal annealing

2010 ◽  
Vol 32 (3) ◽  
pp. 432-435 ◽  
Author(s):  
Tingting Tan ◽  
Zhengtang Liu ◽  
Hongcheng Lu ◽  
Wenting Liu ◽  
Hao Tian
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

2006 ◽  
Vol 100 (11) ◽  
pp. 113515 ◽  
Author(s):  
Jong Hoon Kim ◽  
Byung Du Ahn ◽  
Choong Hee Lee ◽  
Kyung Ah Jeon ◽  
Hong Seong Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

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