Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon

1987 ◽  
Vol 55 (2) ◽  
pp. 63-68 ◽  
Author(s):  
D. Mencaraglia ◽  
J. P. Kleider
Keyword(s):  
Amorphous Silicon ◽  
Ballistic Capture ◽  
Hydrogen Incorporation

Hydrogenated Amorphous Silicon Nitride: Structural and Electronic Properties

1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom
Keyword(s):  
Silicon Nitride ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Interatomic Potential ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Nitride ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.

Isolated Voids in Amorphous Silicon and Related Materials Measured by Effusion of Implanted Helium

2012 ◽  
Vol 1426 ◽  
pp. 341-346 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F. Pennartz ◽  
P. Prunici
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Evaporation ◽  
Silicon Films ◽  
Preparation Process ◽  
Hydrogen Incorporation ◽  
Hydrogenated Amorphous ◽  
Deposition Techniques

ABSTRACTEffusion measurements of hydrogen and implanted helium are reported for (undoped) amorphous and crystalline Si:H and related materials. Effusion of helium observed at temperatures > 600°C is attributed to isolated voids present in the material from the preparation process. While rather high void densities are detected for amorphous silicon films prepared by such deposition techniques like vacuum evaporation or sputtering, much smaller densities are found for plasma grown hydrogenated amorphous silicon (a-Si:H). For device-grade a-Si:H, the density of cavities which can trap helium is estimated to be about 2x1018/cm3at most, suggesting that crystalline silicon type divacancies are not the major hydrogen incorporation site.

Hydrogen in Crystalline and Amorphous Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
Guido L. Chiarotti ◽  
F. Buda ◽  
R. Car ◽  
M. Parrinello
Keyword(s):  
Amorphous Silicon ◽  
Dynamic Properties ◽  
Local Order ◽  
Hydrogen Impurity ◽  
Hydrogen Incorporation ◽  
Dynamics Simulations ◽  
Quality Material ◽  
Insight Into ◽  
Positively Charged ◽  
Good Agreement

AbstractWe investigate static and dynamic properties of hydrogen in crystalline and amorphous silicon by means of ab initio molecular dynamics simulations. In the crystalline case we focus mainly on the diffusion process of an isolated positively charged hydrogen impurity at high temperature. In the amorphous case we analyze the local order and the dynamical properties corresponding to an atomic hydrogen concentration of ~ 11%, typical of a device quality material. In both crystalline and amorphous cases, our results are in good agreement with available experimental data and give unique insight into the microscopic details of hydrogen incorporation in silicon.

Electrical Conductivity and Structural Order of p-Type Amorphous Silicon Thin Films

2014 ◽  
Vol 1757 ◽  
Author(s):  
K. Shrestha ◽  
D. Whitfield ◽  
V. C. Lopes ◽  
A. J. Syllaios ◽  
C.L. Littler
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Range Order ◽  
Total Conductivity ◽  
Hopping Conduction ◽  
Electrical Measurements ◽  
Hydrogen Incorporation

ABSTRACTThe dependence of dark conductivity and room temperature Raman spectra on boron and hydrogen incorporation in thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma enhanced chemical vapor deposition was investigated. It was found that the dominant conductivity is Mott variable range hopping conduction. However, at lower temperatures, Efros-Shklosvkii hopping conduction is observed and contributes to the total conductivity. For structural characterization, transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of boron and hydrogen incorporation. With an increase of hydrogen incorporation and/or substrate temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of the short range order. The line width and frequency of the Raman TO Raman peak correlate with electrical measurements and suggest that this technique can be used for non-destructive characterization of a-Si:H.

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