Study on wet oxidation process and mechanism for ethylene spent caustic

2021 ◽  
pp. 1-10
Author(s):  
Yuan Wei ◽  
Jun Zhao ◽  
ZongJian Liu ◽  
Lin Zhang ◽  
Qun Cui ◽  
...  
Keyword(s):  
Oxidation Process ◽  
Wet Oxidation ◽  
Spent Caustic

The use of catalyst to enhance the wet oxidation process

2007 ◽  
Vol 55 (12) ◽  
pp. 189-193 ◽  
Author(s):  
C. Maugans ◽  
B. Kumfer
Keyword(s):  
Acetic Acid ◽  
Catalytic Activity ◽  
Acrylic Acid ◽  
Oxidation Process ◽  
Wet Oxidation ◽  
Test Results ◽  
Pure Compound ◽  
Spent Caustic

Wet oxidation tests were performed on two pure compound streams: acetic acid and ammonia; and on two wastewater streams: acrylic acid wastewater and sulphide laden spent caustic. Test results showed that Mn/Ce and Pt/TiO2 were effective catalysts that greatly enhanced acetic acid, ammonia and acrylic acid wastewater destruction. However, the Mn/Ce catalyst performance appears to be inhibited by concentrated salts dissolved in solution. This could limit the applicability of this catalyst for the treatment of brackish wastewaters. Zr, Ce and Ce nanoparticles were also shown to exhibit some catalytic activity, however not to the extent of the Mn/Ce and the Pt/TiO2.

Temperature Dependence of Wet Oxidation Process Based on VCSEL

2020 ◽  
Vol 47 (7) ◽  
pp. 0701023
Author(s):  
陈磊 Chen Lei ◽  
罗妍 Luo Yan ◽  
冯源 Feng Yuan ◽  
晏长岭 Yan Changling ◽  
范杰 Fan Jie ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Oxidation Process ◽  
Wet Oxidation

Study on Wet Oxidation Process in Vertical Cavity Surface Emitting Laser

2018 ◽  
Vol 39 (12) ◽  
pp. 1714-1721
Author(s):  
李 颖 LI Ying ◽  
周广正 ZHOU Guang-zheng ◽  
兰 天 LAN Tian ◽  
王智勇 WANG Zhi-yong
Keyword(s):  
Oxidation Process ◽  
Cavity Surface ◽  
Wet Oxidation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

TREATMENT OF SPENT CAUSTIC LIQUOR BY CATALYTIC WET OXIDATION

2000 ◽  
Author(s):  
Hongzhang Du ◽  
Min Yang ◽  
Su Du ◽  
Xianggao Wang ◽  
Xu Yang ◽  
...  
Keyword(s):  
Wet Oxidation ◽  
Catalytic Wet Oxidation ◽  
Spent Caustic

Quantitative Determination of Copper in Natural Rubber

1953 ◽  
Vol 26 (1) ◽  
pp. 251-256 ◽  
Author(s):  
Lewis T. Milliken
Keyword(s):  
Carbon Tetrachloride ◽  
Natural Rubber ◽  
Quantitative Determination ◽  
Oxidation Process ◽  
Aqueous Suspension ◽  
Wet Oxidation ◽  
Acid Extract ◽  
Organic Solution ◽  
Determination Of Copper

Abstract A procedure is recommended in which small amounts of copper in rubber can be measured quantitatively by determining the depth of color of a copper carbamate complex in a carbon tetrachloride solution. The complex is formed in an alkaline solution prepared from an acid extract of the rubber ashed at 550° C. This procedure yields results which are as reliable as those obtained by the more tedious and time-consuming procedures involving the wet-oxidation process which are at present recommended by standardizing organizations. The use of an organic solution rather than an aqueous suspension gives better reproducibility, permits easier use of a photometer, and reduces the interference due to iron by a factor of ten.

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

2006 ◽  
Vol 527-529 ◽  
pp. 1301-1304
Author(s):  
Mitsuo Okamoto ◽  
Mieko Tanaka ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda
Keyword(s):  
Valence Band ◽  
Oxidation Process ◽  
Gate Oxide ◽  
Interface States ◽  
Wet Oxidation ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Dry Oxidation ◽  
Low Threshold ◽  
P Type

We have fabricated inversion-type p-channel MOSFETs on 4H-SiC substrates. In this paper, influences of gate oxidation process on the properties of p-channel MOSFETs were investigated. The gate oxide was formed under these three conditions: (i) dry oxidation, (ii) dry oxidation following wet re-oxidation, and (iii) wet oxidation. The C-V measurements of p-type 4H-SiC MOS capacitors revealed that wet oxidation process reduced the interface states near the valence band. The p-channel MOSFET with low interface states near the valence band indicated low threshold voltage (Vth), high field effect channel mobility (μFE) and low subthreshold swing (S). We obtained 4H-SiC p-channel MOSFET with high μFE of 15.6cm2/Vs by using wet oxidation as gate oxidation process.

An analytical method for 14C in environmental water based on a wet-oxidation process

2015 ◽  
Vol 142 ◽  
pp. 1-8 ◽  
Author(s):  
Yan-Jun Huang ◽  
Gui-Yin Guo ◽  
Lian-Sheng Wu ◽  
Bing Zhang ◽  
Chao-Feng Chen ◽  
...  
Keyword(s):  
Analytical Method ◽  
Oxidation Process ◽  
Environmental Water ◽  
Wet Oxidation ◽  
Water Based
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