Impact of N5+ion implantation on optical and electrical properties of polycrystalline ZnO film

2014 ◽  
Vol 169 (11) ◽  
pp. 965-979
Author(s):  
Ashutosh Kumar ◽  
Sunita Keshri ◽  
Beauty Pandey ◽  
J. B. M. Krishna ◽  
Dipankar Das
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Optical And Electrical Properties ◽  
Zno Film

Influence of Li implantation on the optical and electrical properties of ZnO film

2011 ◽  
Author(s):  
Saurabh Nagar ◽  
Bhavesh Sinha ◽  
Arjun Mandal ◽  
S. K. Gupta ◽  
Subhananda Chakrabarti
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Zno Film

Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

2007 ◽  
Vol 253 (11) ◽  
pp. 5161-5165 ◽  
Author(s):  
Jingchang Sun ◽  
Jiming Bian ◽  
Hongwei Liang ◽  
Jianze Zhao ◽  
Lizhong Hu ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Zno Film

Effect of boron ion implantation on the structural, optical and electrical properties of ZnSe thin films

2007 ◽  
Vol 390 (1-2) ◽  
pp. 71-78 ◽  
Author(s):  
S. Venkatachalam ◽  
Yoshinori Kanno ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Optical And Electrical Properties ◽  
Znse Thin Films

Surface Modification of Soda Glass by Recoil Ion Implantation of In2O3.

1985 ◽  
Vol 45 ◽  
Author(s):  
K. C. Cadien ◽  
B. B. Harbison
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Energy Deposition ◽  
Optical And Electrical Properties ◽  
Deposition Rates ◽  
Ion Energy ◽  
Soda Glass ◽  
Glass Substrates

ABSTRACTRecoil ion implantation of In2O3 into soda glass substrates has been investigated. Increased adhesion results, while the optical and electrical properties are altered. Large energy deposition rates can lead to the reduction of the oxide, thus decreasing visible transmission. Thermal annealing in air results in the recovery of optical and electrical properties. The influence of ion energy and dose on the modification of the glass has been examined.

scholarly journals Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval

2019 ◽  
Vol 64 (5) ◽  
pp. 434 ◽  
Author(s):  
O. V. Melnichuk ◽  
L. Yu. Melnichuk ◽  
N. O. Korsunska ◽  
L. Yu. Khomenkova ◽  
Ye. F. Venger
Keyword(s):  
Electrical Properties ◽  
Silicon Oxide ◽  
Oscillator Strengths ◽  
Zno Films ◽  
Spectral Interval ◽  
Reflection Spectra ◽  
Optical And Electrical Properties ◽  
Zno Film ◽  
Field Orientation ◽  
Sio2 Substrate

Optical and electrophysical properties of terbium-doped zinc oxide films have been studied, by using the external reflection IR spectroscopy. The films were deposited onto silicon oxide substrates with the help of the magnetron sputtering method. A theoretical analysis of the reflection spectra of the ZnO/SiO2 structure is carried out in the framework of a multioscillatory model in the spectral interval 50–1500 cm−1 and for the electrical field orientation perpendicular to the c-axis (E⊥C). The method of dispersion analysis is applied to determine the optical and electrical properties of ZnO films, as well as the oscillator strengths and damping coefficients in the ZnO film and the SiO2 substrate. The influences of the phonon and plasmon-phonon subsystems in the ZnO film on the shape of IR reflection spectra registered from the Tb–ZnO/SiO2 structure are elucidated.

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