Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

2018 ◽  
Vol 439 ◽  
pp. 780-783 ◽  
Author(s):  
Meizhe Lv ◽  
Bin Xu ◽  
Lichao Cai ◽  
Xiaofei Guo ◽  
Xingdong Yuan
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Cubic Boron Nitride ◽  
Spectroscopy Analysis ◽  
Growth Interface ◽  
Auger Electron Spectroscopy Analysis

scholarly journals Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Lichao Cai ◽  
Bin Xu ◽  
Meizhe Lv ◽  
Feng Jia ◽  
Xingdong Yuan
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Growth Mechanism ◽  
Cubic Boron Nitride ◽  
Crystal Defects ◽  
Synthetic Process ◽  
Growth Defects ◽  
Hole Defects

Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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