The threshold energy for electron irradiation damage in single-crystal graphite

1977 ◽  
Vol 35 (5) ◽  
pp. 1425-1428 ◽  
Author(s):  
R. F. Egerton
Keyword(s):  
Single Crystal ◽  
Electron Irradiation ◽  
Threshold Energy ◽  
Irradiation Damage

Electron Irradiation Damage in Radiation-Resistant InP Solar Cells

1984 ◽  
Vol 23 (Part 1, No. 3) ◽  
pp. 302-307 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Chikao Uemura ◽  
Akio Yamamoto ◽  
Atsushi Shibukawa
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Irradiation Damage ◽  
Radiation Resistant

The effects of helium on irradiation damage in single crystal iron

2007 ◽  
Vol 367-370 ◽  
pp. 451-456 ◽  
Author(s):  
Chaitanya S. Deo ◽  
Maria A. Okuniewski ◽  
Srinivasan G. Srivilliputhur ◽  
Stuart A. Maloy ◽  
Mike I. Baskes ◽  
...  
Keyword(s):  
Single Crystal ◽  
Irradiation Damage

Electron irradiation damage in austenitic stainless steels

1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu
Keyword(s):  
Electron Irradiation ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
Irradiation Damage

scholarly journals Amplified Spontaneous Emission and Optical Gain in Organic Single Crystal Quinquethiophene

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 609 ◽  
Author(s):  
Muhammad Zeb ◽  
Muhammad Tahir ◽  
Fida Muhammad ◽  
Suhana Mohd Said ◽  
Mohd Faizul Mohd Sabri ◽  
...  
Keyword(s):  
Single Crystal ◽  
Spontaneous Emission ◽  
Threshold Energy ◽  
Pump Energy ◽  
Optical Gain ◽  
Amplified Spontaneous Emission ◽  
Stimulated Emission ◽  
Excitation Wavelength ◽  
Optical Amplification ◽  
Organic Single Crystal

In this paper, we report optical characteristics of an organic single crystal oligomer 5,5⁗-diphenyl-2,2′:5′,2″:5″,2‴:5‴,2⁗-quinquethiophene (P5T). P5T crystal is a thiophene/phenylene co-oligomer that possesses better charge mobility as well as photoluminescence quantum efficiency (PLQE) as compared to other organic materials. Stimulated emission in P5T is investigated via amplified spontaneous emission (ASE) measurements within broad pump energies ranging from 35.26 to 163.34 µJ/cm2. An Nd-YAG femtosecond-tunable pulsed laser is used as a pump energy source for the ASE measurements of P5T crystals at an excitation wavelength of 445 nm. The ASE spectra exhibit optical amplification in P5T crystals at a 625 nm peak wavelength with a lower threshold energy density (Eth) ≈ 52.64 μJ/cm2. P5T also demonstrates higher optical gain with a value of 72 cm−1, that is calculated by using the variable stripe-length method. The value of PLQE is measured to be 68.24% for P5T. This study proposes potential applications of P5T single crystals in organic solid state lasers, photodetectors, and optical amplifiers.

Modifying the Dielectric Properties of the TlGaS2 Single Crystal by Electron Irradiation

2020 ◽  
Vol 49 (4) ◽  
pp. 263-268
Author(s):  
S. M. Asadov ◽  
S. N. Mustafaeva ◽  
V. F. Lukichev
Keyword(s):  
Dielectric Properties ◽  
Single Crystal ◽  
Electron Irradiation

Electron irradiation damage in high purity aluminum

1977 ◽  
Vol 64 (1-2) ◽  
pp. 157-166 ◽  
Author(s):  
W.J Yang ◽  
R.A Dodd ◽  
G.L Kulcinski
Keyword(s):  
Electron Irradiation ◽  
High Purity ◽  
Irradiation Damage ◽  
High Purity Aluminum

Cathodoluminescence Microanalysis of Electron Irradiation Damage in Wide Band Gap Materials

1998 ◽  
Vol 540 ◽  
Author(s):  
M.A. stevens Kalceff ◽  
M.R. Phillips ◽  
M. Toth ◽  
A.R. Moon ◽  
D.N. Jamieson ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Depth Resolution ◽  
Wide Band ◽  
In Situ Monitoring ◽  
Irradiation Damage ◽  
Wide Band Gap ◽  
Energetic Radiation ◽  
Defect Species

AbstractCathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H+ ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.

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