Gaussian Distribution of the Charge Traps in the Energy Gap of MDMO-PPV and Its Dependence on Synthesis Route Revealed by the Thermally Stimulated Current Spectroscopy

2014 ◽  
Vol 604 (1) ◽  
pp. 96-106 ◽  
Author(s):  
M. Pranaitis ◽  
A. Sakavičius ◽  
V. Janonis ◽  
V. Kažukauskas
Keyword(s):  
Gaussian Distribution ◽  
Energy Gap ◽  
Thermally Stimulated Current ◽  
Synthesis Route ◽  
Thermally Stimulated Current Spectroscopy

Investigation on defect levels in CdZnTe : Al using thermally stimulated current spectroscopy

2010 ◽  
Vol 43 (34) ◽  
pp. 345104 ◽  
Author(s):  
Ruihua Nan ◽  
Wanqi Jie ◽  
Gangqiang Zha ◽  
Tao Wang ◽  
Yadong Xu ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Thermally Stimulated Current Spectroscopy ◽  
Defect Levels

Deep States in GaN Studied by Thermally Stimulated Current Spectroscopy

1995 ◽  
Vol 395 ◽  
Author(s):  
Z.C. Huang ◽  
J.C. Chen ◽  
D.B. Mott
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Surface States ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Thermally Stimulated Current ◽  
Furnace Annealing ◽  
Thermally Stimulated Current Spectroscopy

ABSTRACTDeep levels in insulating GaN grown by metalorganic chemical vapor deposition have been studied using thermally stimulated current (TSC) and photocurrent (PC) spectroscopies. Five main traps were observed by TSC measurement in the as-grown undoped GaN in the range of 0-0.75 eV below the conduction band edge or above the valence band edge. Their activation energies were 0.11, 0.24, 0.36, 0.53 and 0.62 eV, respectively. PC measurements showed three deep levels located within the bandgap at 1.32, 1.70 and 2.36 eV, respectively. Furnace annealing was carried out on GaN for identifying all the observed deep levels. We have found that the 0.24, 0.36 and 0.53 eV traps were eliminated by annealing at 1000°C under N2for six hours, whereas the 0.62 eV trap density increased after annealing. The three deep levels detected by the PC measurement were not affected by annealing. The 1.70 eV trap, which is located at the midgap, does not seem to compensate with narrow donors. We attribute the 0.11 eV trap to surface states, and the 0.62 eV trap to nitrogen vacancies.

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