A CROSSED MOLECULAR BEAM, LOW-TEMPERATURE KINETICS, AND THEORETICAL INVESTIGATION OF THE REACTION OF THE CYANO RADICAL (CN) WITH 1,3-BUTADIENE (C4H6). A ROUTE TO COMPLEX NITROGEN-BEARING MOLECULES IN LOW-TEMPERATURE EXTRATERRESTRIAL ENVIRONMENTS

2011 ◽  
Vol 742 (1) ◽  
pp. 26 ◽  
Author(s):  
Sébastien B. Morales ◽  
Christopher J. Bennett ◽  
Sébastien D. Le Picard ◽  
André Canosa ◽  
Ian R. Sims ◽  
...  
2000 ◽  
Vol 197 ◽  
pp. 251-264 ◽  
Author(s):  
R. I. Kaiser ◽  
N. Balucani ◽  
O. Asvany ◽  
Y. T. Lee

During the last 5 years, laboratory experiments relevant to the formation of carbon-bearing molecules in extraterrestrial environments have been performed employing the crossed molecular beam technique and a high intensity source of ground state atomic carbon, C(3Pj). These investigations unraveled for the first time detailed information on the chemical reaction dynamics, involved collision complexes and intermediates, and – most important – reaction products of neutral-neutral reactions. Here, we extend these studies even further, and report on very recent crossed beam experiments of cyano radical, CN(2Σ+), reactions with unsaturated hydrocarbons to form nitriles in extraterrestrial environments and Saturn's moon Titan. Further, preliminary results on reactions of small carbon clusters and with acetylene, ethylene, and methylacetylene to synthesize hydrogen-deficient carbon-bearing molecules are presented.


2015 ◽  
Vol 17 (33) ◽  
pp. 21564-21575 ◽  
Author(s):  
Tao Yang ◽  
Lloyd Muzangwa ◽  
Ralf I. Kaiser ◽  
Adeel Jamal ◽  
Keiji Morokuma

Flux contour map for the reactive scattering channel of meta-tolyl radical with vinylacetylene.


2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  

2003 ◽  
Vol 6 (5-6) ◽  
pp. 425-427 ◽  
Author(s):  
K. Ogawa ◽  
H. Ofuchi ◽  
H. Maki ◽  
T. Sonoyama ◽  
D. Inoue ◽  
...  

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


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