Grain boundary scattering for temperature coefficient of resistance (TCR) behaviour of Ta–Si–N thin films

2008 ◽  
Vol 41 (18) ◽  
pp. 185404 ◽  
Author(s):  
C K Chung ◽  
A Nautiyal ◽  
T S Chen ◽  
Y L Chang
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Temperature Coefficient ◽  
Boundary Scattering ◽  
Temperature Coefficient Of Resistance ◽  
Grain Boundary Scattering

scholarly journals Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries

2014 ◽  
Vol 32 (6) ◽  
pp. 061503 ◽  
Author(s):  
Katayun Barmak ◽  
Amith Darbal ◽  
Kameswaran J. Ganesh ◽  
Paulo J. Ferreira ◽  
Jeffrey M. Rickman ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantitative Analysis ◽  
Grain Boundary ◽  
Boundary Scattering ◽  
Twin Boundaries ◽  
Grain Boundary Scattering

Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films

1981 ◽  
Vol 10 ◽  
Author(s):  
D. R. Campbell ◽  
S. Mader ◽  
W. K. Chu
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Reflection Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Charge Carriers ◽  
Boundary Scattering ◽  
Grain Boundary Scattering

ABSTRACTResistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.

scholarly journals Suppressed grain-boundary scattering in atomic layer deposited Nb:TiO2 thin films

2015 ◽  
Vol 107 (19) ◽  
pp. 192102 ◽  
Author(s):  
Janne-Petteri Niemelä ◽  
Yasushi Hirose ◽  
Kei Shigematsu ◽  
Masahito Sano ◽  
Tetsuya Hasegawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Atomic Layer ◽  
Boundary Scattering ◽  
Grain Boundary Scattering

Suppression of Grain Boundary Scattering in Multifunctional p-Type Transparent γ-CuI Thin Films due to Interface Tunneling Currents

2018 ◽  
Vol 5 (6) ◽  
pp. 1701411 ◽  
Author(s):  
Max Kneiß ◽  
Chang Yang ◽  
José Barzola-Quiquia ◽  
Gabriele Benndorf ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Tunneling Currents ◽  
P Type

Grain boundary scattering in ruthenium dioxide thin films

1994 ◽  
Vol 238 (1) ◽  
pp. 158-162 ◽  
Author(s):  
S.Y. Mar ◽  
J.S. Liang ◽  
C.Y. Sun ◽  
Y.S. Huang
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Ruthenium Dioxide ◽  
Boundary Scattering ◽  
Grain Boundary Scattering

scholarly journals Impacts of the thickness on the electron mobility of gallium and hydrogen co– doped zinc oxide thin films

2019 ◽  
Vol 2 (2) ◽  
pp. 82-87
Author(s):  
Anh Thanh Tuan Pham ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Electron Mobility ◽  
High Mobility ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Average Transmittance ◽  
Wide Wavelength Range ◽  
Doped Zno ◽  
Co Doped

this work, impacts of the thickness on electron mobility of Ga and H2 co-doped ZnO (HGZO) thin films were investigated. The HGZO films were prepared on glass substrate by using magnetron sputtering from ceramic Ga-doped ZnO (GZO) target in the gas mixture of argon and hydrogen. Based on the Hall measurement, the mobility enhanced fastly from 44.6 to 53.4cm2/Vs with the increasing thickness from 350 to 900 nm, then tends to be saturated at ~55cm2/Vs with further thickness. Most of the films achieve the mobility of >50cm2/Vs, which is very high value for sputtered TCOs thin films. The thicknessdependent mobility is explained in term of grain boundary scattering. The improvement of crystalline quality reduced grain boundary scattering, which lead to the fast increase in mobility of the films with 350–900nm in thickness. When the thickness increased more than 900nm, however, the appearance of many defects increased scattering centers and saturates the mobility. Furthermore, the results showed the HGZO films with optimum thickness of 800nm obtained low resistivity (5.3 10-4􀁛cm), high average transmittance (83.3%) in the wide wavelength range of 400–1100nm, and the highest figure of merit (10.3 103􀁛-1cm-1) corresponding to high mobility (51.1cm2/Vs).

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