Surface modification layer deposition on flexible substrates by plasma-enhanced chemical vapour deposition using tetramethylsilane–oxygen gas mixture

2008 ◽  
Vol 41 (22) ◽  
pp. 225305 ◽  
Author(s):  
Cheng-Yang Wu ◽  
Wen-Cheng Chen ◽  
Day-Shan Liu
Keyword(s):  
Surface Modification ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Gas Mixture ◽  
Flexible Substrates ◽  
Layer Deposition ◽  
Oxygen Gas

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

Plasma assisted chemical vapour deposition of boron nitride coatings from using BCl3–N2–H2–Ar gas mixture

Vacuum ◽  
1999 ◽  
Vol 52 (1-2) ◽  
pp. 169-181 ◽  
Author(s):  
F. Rossi ◽  
C. Schaffnit ◽  
L. Thomas ◽  
H. del Puppo ◽  
R. Hugon
Keyword(s):  
Boron Nitride ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Gas Mixture ◽  
Nitride Coatings ◽  
Ar Gas

scholarly journals Reactive Chemical Vapour Deposition of Titanium Carbide from H2-TiCl4 Gas Mixture on Pyrocarbon: A Comprehensive Study

2013 ◽  
Vol 46 ◽  
pp. 79-87 ◽  
Author(s):  
O. Ledain ◽  
W. Woelffel ◽  
J. Roger ◽  
G. Vignoles ◽  
L. Maillé ◽  
...  
Keyword(s):  
Titanium Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Gas Mixture ◽  
Comprehensive Study

Improved Efficiency of Single Junction Microcrystalline Silicon n-i-p Solar Cells with an i-Layer Made by Hot-Wire CVD

2007 ◽  
Vol 989 ◽  
Author(s):  
Hongbo Li ◽  
Ronald H.J. Franken ◽  
Robert L. Stolk ◽  
C. H.M. van der Werf ◽  
Jan-Willem A. Schuttauf ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Single Junction ◽  
Layer Deposition ◽  
P Cells

AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.

scholarly journals Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Chii-Ruey Lin ◽  
Da-Hua Wei ◽  
Minh-Khoa BenDao ◽  
Hong-Ming Chang ◽  
Wei-En Chen ◽  
...  
Keyword(s):  
Surface Modification ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Plasma Jet ◽  
Nanocrystalline Diamond ◽  
Initial Growth ◽  
Nanocrystalline Diamond Films

The seedings of the substrate with a suspension of nanodiamond particles (NDPs) were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms) on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

Synthesis of carbon coated β-SiC nanofibers by microwave plasma assisted chemical vapour deposition in CH4/H2 gas mixture

2008 ◽  
Vol 17 (7-10) ◽  
pp. 1660-1665 ◽  
Author(s):  
S. Rizk ◽  
M.B. Assouar ◽  
C. Gatel ◽  
M. Belmahi ◽  
J. Lambert ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Gas Mixture ◽  
Carbon Coated

scholarly journals Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

2020 ◽  
Author(s):  
Matthew Griffiths ◽  
Zachary Dubrawski ◽  
Peter Gordon ◽  
Marcel Junige ◽  
Sean Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Figure Of Merit ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Thermal Characteristics ◽  
Atomic Layer ◽  
Figures Of Merit ◽  
Layer Deposition

A survey of known gold-containing chemical vapour deposition (CVD) and atomic layer deposition (ALD) precursors, with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed to easily assess the thermal characteristics.

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