scholarly journals Sub-micron period lattice structures of magnetic microtraps for ultracold atoms on an atom chip

2015 ◽  
Vol 48 (11) ◽  
pp. 115002 ◽  
Author(s):  
I Herrera ◽  
Y Wang ◽  
P Michaux ◽  
D Nissen ◽  
P Surendran ◽  
...  
2010 ◽  
Vol 19 (8) ◽  
pp. 083205
Author(s):  
Cheng Feng ◽  
Yan Bo ◽  
Ke Min ◽  
Wang Yu-Zhu

2008 ◽  
Vol 41 (6) ◽  
pp. 065301 ◽  
Author(s):  
M Singh ◽  
M Volk ◽  
A Akulshin ◽  
A Sidorov ◽  
R McLean ◽  
...  

2007 ◽  
Vol 75 (6) ◽  
Author(s):  
S. Kraft ◽  
A. Günther ◽  
J. Fortágh ◽  
C. Zimmermann

2019 ◽  
Vol 29 (2) ◽  
pp. 97
Author(s):  
Tien Duy Tran ◽  
Yibo Wang ◽  
Alex Glaetzle ◽  
Shannon Whitlock ◽  
Andrei Sidorov ◽  
...  

This article reviews the development in our laboratory of magnetic lattices comprising periodic arrays of magnetic microtraps created by patterned magnetic films to trap periodic arrays of ultracold atoms. Recent achievements include the realisation of multiple Bose-Einstein condensates in a 10 \(\mu\)m-period one-dimensional magnetic lattice; the fabrication of sub-micron-period square and triangular magnetic lattice structures suitable for quantum tunnelling experiments; the trapping of ultracold atoms in a sub-micron-period triangular magnetic lattice; and a proposal to use long-range interacting Rydberg atoms to achieve spin-spin interactions between sites in a large-spacing magnetic lattice.


Author(s):  
C. T. Fancher ◽  
A. R. Ziltz ◽  
A. J. Pyle ◽  
M. K. Ivory ◽  
S. Aubin
Keyword(s):  

2007 ◽  
Author(s):  
Mandip Singh ◽  
Michael Volk ◽  
Alexander Akulshin ◽  
Russell McLean ◽  
Andrei Sidorov ◽  
...  
Keyword(s):  

2009 ◽  
Vol 87 (6) ◽  
pp. 633-638 ◽  
Author(s):  
O. Cherry ◽  
J. D. Carter ◽  
J. D.D. Martin

We have fabricated an atom chip that magnetically traps laser cooled 87Rb by generating high magnetic-field gradients using micrometre scale current-carrying wires. The wires are fabricated on a Si wafer (with a 40 nm SiO2 layer) using 1.2 μm thick Au and a 20 nm thick adhesion layer, and are patterned with lift-off photolithography. We characterize the number and temperature of the cold atoms trapped by the chip.


Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.


Author(s):  
C. K. Wu

The precipitation phenomenon in Al-Zn-Mg alloy is quite interesting and complicated and can be described in the following categories:(i) heterogeneous nucleation at grain boundaries;(ii) precipitate-free-zones (PFZ) adjacent to the grain boundaries;(iii) homogeneous nucleation of snherical G.P. zones, n' and n phases inside the grains. The spherical G.P. zones are coherent with the matrix, whereas the n' and n phases are incoherent. It is noticed that n' and n phases exhibit plate-like morpholoay with several orientation relationship with the matrix. The high resolution lattice imaging techninue of TEM is then applied to study precipitates in this alloy system. It reveals the characteristics of lattice structures of each phase and the orientation relationships with the matrix.


Sign in / Sign up

Export Citation Format

Share Document