Assessment of Point Defects and Impurities in Semi-Insulating GaAs

1982 ◽  
Vol T1 ◽  
pp. 38-42 ◽  
Author(s):  
G M Martin
Keyword(s):  
Point Defects ◽  
Defects And Impurities

scholarly journals Native point defects and impurities in hexagonal boron nitride

2018 ◽  
Vol 97 (21) ◽  
Author(s):  
L. Weston ◽  
D. Wickramaratne ◽  
M. Mackoit ◽  
A. Alkauskas ◽  
C. G. Van de Walle
Keyword(s):  
Boron Nitride ◽  
Point Defects ◽  
Hexagonal Boron Nitride ◽  
Native Point Defects ◽  
Defects And Impurities

Identification of Microdefects in Multicrystalline Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
M. Werner ◽  
H. J. Möller ◽  
E. Wolf
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Multicrystalline Silicon ◽  
Etch Pits ◽  
Qualitative Comparison ◽  
Amorphous Silicon Dioxide ◽  
Agglomeration Process ◽  
Transmission Electron ◽  
Different Types ◽  
Defects And Impurities

ABSTRACTMicrodefects in multicrystalline silicon grown by directional solidification have been investigated by transmission electron microscopy. Their density (=106 cm−2) correlates with the density of shallow etch pits observed after chemomechanical polishing and selective etching. Different types of microdefects (size 10 – 100 nm) could be identified: i) spherical precipitates most likely amorphous silicon dioxide, ii) small plates lying on {111} planes and iii) groups of closely spaced stacking faults having the character of dipoles. It is argued that these defects are the result of agglomeration process of intrinsic point defects and impurities, where oxygen and carbon are the main candidates. A qualitative comparison to the point defects agglomeration observed in Cz material will be given.

Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties

2007 ◽  
Vol 131-133 ◽  
pp. 345-350 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
Tiit Kärner ◽  
Ü. Ugaste ◽  
Tony Laas ◽  
...  
Keyword(s):  
Point Defects ◽  
Hydrogen Adsorption ◽  
Impurity Content ◽  
Magnetic Interaction ◽  
Interface Properties ◽  
Extended Defects ◽  
Oxidation Condition ◽  
Paramagnetic Impurities ◽  
Defects And Impurities ◽  
P Type

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. Interaction between the point defects with extended defects and impurities affects the SiO2 structure and Si-SiO2 interface properties. Hydrogen adsorption on n- and p- type wafers is different. One possible reason for that can be the strength of the magnetic interaction between the hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of the oxidation conditions and postoxidation laser irradiation.

Ion-beam-assisted growth of doped Si layers

1988 ◽  
Vol 3 (6) ◽  
pp. 1212-1217 ◽  
Author(s):  
F. Priolo ◽  
A. La Ferla ◽  
E. Rimini
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Point Defects ◽  
Ion Beam ◽  
Target Temperature ◽  
Defects And Impurities

The growth of preamorphized silicon layers doped by multiple energy implants of boron, phosphorus, and boron plus phosphorus ions was investigated under irradiation with a 600 keV Kr+ + beam. The target temperature was set in the range 250–450 °C. During irradiation the growth was measured in situ by transient reflectivity. Boron and phosphorus at a concentration of 1 × 1020/cm3 enhance the rate by a factor of 3 and 2, respectively, whilst in compensated samples the rate is still more than a factor of 2 higher than in intrinsic or Ge-doped samples. This growth rate is characterized by an activation energy of 0.32 ± 0.05 eV which is, within the experimental uncertainties, independent of the dopant. The results are tentatively explained in terms of an interaction between generated point defects and impurities that increases the lifetime of defects at the crystal–amorphous interface.

Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

2004 ◽  
Vol 459 (1-2) ◽  
pp. 53-57
Author(s):  
D Kropman ◽  
T Kärner ◽  
U Abru ◽  
Ü Ugaste ◽  
E Mellikov
Keyword(s):  
Point Defects ◽  
Extended Defects ◽  
Sio2 System ◽  
Defects And Impurities

scholarly journals TEM Study of Defects in Laterally Overgrown GaN Layers

1999 ◽  
Vol 4 (S1) ◽  
pp. 459-464 ◽  
Author(s):  
Z. Liliental-Weber ◽  
M. Benamara ◽  
W. Swider ◽  
J. Washburn ◽  
J. Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Crystallographic Direction ◽  
Initial Growth ◽  
Lateral Growth ◽  
Planar Defects ◽  
Transmission Electron ◽  
Defects And Impurities ◽  
Two Sides ◽  
Line Direction

Transmission electron microscopy was applied to study defects in laterally overgrown GaN layers, with initial growth on Al2O3 substrates followed by further growth over SiO2 masks. Dislocations found in the overgrown areas show changes in line direction. Most dislocations propagate along c-planes. In the overgrown material planar defects (faulted loops) are present on c-planes and their presence is most probably related to segregation of excess point defects and impurities present in this material. They appear to be initiated by the fast lateral growth. Some dislocations with screw orientation become helical resulting from climb motion.Formation of voids and also a high dislocation density was observed at the boundaries where two overgrowing fronts meet. Tilt and twist components were observed for these boundaries that were different for different overgrown strips grown in the same crystallographic direction suggesting that the GaN subgrain orientations on the two sides of a SiO2 mask are responsible for the final tilt and twist value.

Interactions of Point Defects and Impurities With Open Volume Defects in Silicon

2000 ◽  
Vol 647 ◽  
Author(s):  
J.S. Williams ◽  
M.C. Ridgway ◽  
M.J. Conway ◽  
J. Wong-Leung ◽  
B.C. Williams ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Open Volume ◽  
First Case ◽  
Defects And Impurities ◽  
High Doses ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Non Equilibrium

AbstractIon implantation can produce open volume defects in silicon by one of two methods, either by H or He implantation followed by annealing to create a band of nanocavities and also by direct implantation to reasonably high doses, which results in a vacancy excess region at depths less than about half the projected ion range. This paper reviews three interesting aspects of open volume defects. In the first case, the very efficient gettering of fast diffusing metals to nanocavities formed by H-implantation is illustrated. In addition, the non-equilibrium behaviour of Cu3Si precipitation and dissolution at cavities is examined. The second example treats the interaction of irradiation-induced defects with nanocavities, particularly preferential amorphisation at open volume defects and subsequent cavity shrinkage. The final example illustrates the coalescence of excess vacancies into small voids on annealing and the use of gettering of Au to detect such open volume defects.

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