Image Sensing: Image sensors feel the squeeze

A new dry cleaning methodology named laser shock cleaning and optical inspection technique has been applied not only to remove the particles from the surfaces of image sensors but also to inspect the surfaces automatically before or after the cleaning. In the packaging of CMOS and CCD image sensing modules, the particles generated during the assembly process should be removed from the surfaces of image sensors in order to ensure clear image as well as to enhance the yield. The different kinds of particles were removed from the surfaces by the laser shock cleaning technique which utilizes the airborne shock wave induced by intense laser pulse. For the quantitative evaluation of cleaning performance, number, shape and size of the particles on the surfaces of image sensors were measured by vision inspection technique before and after cleaning. It was found that most particles on the surfaces were successfully removed after the treatment of laser-induced shock waves. The average removal efficiency of the particles was over 95 %. It is interestingly found that the remaining particles after the cleaning are based on organics, which are probably attached during the bonding process.

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A CMOS voltage-mode image sensing system

10.32920/ryerson.14645022.v1 ◽

2021 ◽

Author(s):

Jun Long Zhang

Keyword(s):

Cmos Image Sensor ◽

Cmos Technology ◽

Image Sensor ◽

Electrical Signal ◽

Image Sensors ◽

Analog To Digital ◽

Light Sensing ◽

Image Sensing ◽

Cmos Image Sensors ◽

Pixel Sensors

A CMOS image sensor consists of a light sensing region that converts photonic energy to an electrical signal and a peripheral circuitry that performs signal conditioning and post-processing. This project investgates the principle and design of CMOS active image sensors. The basic concepts and principle of CMOS image sensors are investigated. The advantages of CMOS image sensors over charge-coupled device (CCD) image sensors are presented. Both passive pixel sensors (PPS) and acive pixel sensors (APS) are examined in detail. The noise of CMOS image sensors is investigated and correlated double sampling (CDS) techniques are examined. The design of APS arrays, CDS circuits and 8-bit analog to-digital converters in TSMC-0.18μm 1.8V CMOS technology is presented. The simulation results and layout of the designed CMOS image sensor are presented.

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Large-scale image sensing by a group of smart image sensors

Parallel Computing ◽

10.1016/j.parco.2008.09.003 ◽

2008 ◽

Vol 34 (12) ◽

pp. 710-717 ◽

Cited By ~ 1

Author(s):

Myeongsoo Oh ◽

Kiyoharu Aizawa

Keyword(s):

Large Scale ◽

Image Sensors ◽

Image Sensing

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Simulations of Passive Matrix Polymer Image Sensors

MRS Proceedings ◽

10.1557/proc-558-339 ◽

1999 ◽

Vol 558 ◽

Cited By ~ 2

Author(s):

D. Braun ◽

G. Yu

Keyword(s):

Simulation Study ◽

Circuit Simulation ◽

Image Sensors ◽

Two Dimensional ◽

Matrix Polymer ◽

Common Solution ◽

Image Sensing ◽

Sensing Applications ◽

Switching Unit ◽

The Common

ABSTRACTTwo-dimensional passive photodiode matrices are hardly useful for image sensing due to the crosstalk between pixels. This crosstalk makes it difficult to recover information from individual pixels. A switching unit attached to each sensing unit has been the common solution in image sensors (such as in CMOS sensors and in TFT-PiN a-Si photosensors). A novel organic photodiode with voltage-switchable photosensitivity was developed recently. Passive photodiode matrices made with such organic photodiodes can be used for image sensing applications. This circuit simulation study demonstrates an effective scheme to extract images from passive photodiode matrices, concluding that individual photodiode parameters determine the contrast and resolution of N by M image sensors.

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Networked large-scale image sensing system using spatially-variant sampling smart image sensors

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353) ◽

10.1109/iscas.2002.1010979 ◽

2003 ◽

Author(s):

Myeongsoo Oh ◽

K. Aizawa

Keyword(s):

Large Scale ◽

Image Sensors ◽

Sensing System ◽

Image Sensing ◽

Spatially Variant

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CMOS Image Sensor

Developing and Applying Optoelectronics in Machine Vision - Advances in Computational Intelligence and Robotics ◽

10.4018/978-1-5225-0632-4.ch002 ◽

2017 ◽

pp. 38-78

Author(s):

Arjuna Marzuki

Keyword(s):

Image Sensor ◽

Image Sensors ◽

Digital Signals ◽

Mixed Signal ◽

Video Cameras ◽

Image Sensing ◽

Mixed Signal Circuits ◽

Cmos Image Sensors ◽

Machine Vision Application ◽

The One

In the image sensing optical receiver, such as CMOS Image Sensors (CIS), in general, comprise of photodiode and analog-mixed -signal circuits to amplify small photocurrent into digital signals. The CMOS image sensors are now the technology of choice for most imaging applications, such as digital video cameras, scanner and numerous other. Even though their sensitivity does not reach the one of the best actual CCD's (whose fill factor is about 100%), they are now commonly used because of their multiple functionalities and their easy fabrication. CMOS analog-mixed -signal circuits play a very important role for CMOS image sensors. This chapter will present the recent works on the CMOS analog-mixed -signal circuit for image sensing application, particularly for device related to machine vision application. A review of designing aspect of CIS are done. A proposed light integrating CIS was developed and measured.

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A CMOS voltage-mode image sensing system

10.32920/ryerson.14645022 ◽

2021 ◽

Author(s):

Jun Long Zhang

Keyword(s):

Cmos Image Sensor ◽

Cmos Technology ◽

Image Sensor ◽

Electrical Signal ◽

Image Sensors ◽

Analog To Digital ◽

Light Sensing ◽

Image Sensing ◽

Cmos Image Sensors ◽

Pixel Sensors

A CMOS image sensor consists of a light sensing region that converts photonic energy to an electrical signal and a peripheral circuitry that performs signal conditioning and post-processing. This project investgates the principle and design of CMOS active image sensors. The basic concepts and principle of CMOS image sensors are investigated. The advantages of CMOS image sensors over charge-coupled device (CCD) image sensors are presented. Both passive pixel sensors (PPS) and acive pixel sensors (APS) are examined in detail. The noise of CMOS image sensors is investigated and correlated double sampling (CDS) techniques are examined. The design of APS arrays, CDS circuits and 8-bit analog to-digital converters in TSMC-0.18μm 1.8V CMOS technology is presented. The simulation results and layout of the designed CMOS image sensor are presented.

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